CY7C1514V18-167BZC Cypress Semiconductor Corp, CY7C1514V18-167BZC Datasheet

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CY7C1514V18-167BZC

Manufacturer Part Number
CY7C1514V18-167BZC
Description
IC SRAM 72MBIT 167MHZ 165TFBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1514V18-167BZC

Format - Memory
RAM
Memory Type
SRAM - Synchronous, QDR II
Memory Size
72M (2M x 36)
Speed
167MHz
Interface
Parallel
Voltage - Supply
1.7 V ~ 1.9 V
Operating Temperature
0°C ~ 70°C
Package / Case
165-TFBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1514V18-167BZC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Features
Configurations
CY7C1512V18 – 4M x 18
CY7C1514V18 – 2M x 36
Selection Guide
Cypress Semiconductor Corporation
Document #: 38-05489 Rev. *G
Maximum Operating Frequency
Maximum Operating Current
Separate independent read and write data ports
250 MHz clock for High Bandwidth
2 word burst on all accesses
Double Data Rate (DDR) interfaces on both Read and Write
Ports (data transferred at 500 MHz) at 250 MHz
Two input clocks (K and K) for precise DDR timing
Two Input Clocks for output data (C and C) to minimize Clock
Skew and Flight Time mismatches
Echo clocks (CQ and CQ) simplify Data Capture in High Speed
Systems
Single multiplexed address Input Bus latches Address Inputs
for both read and Write Ports
Separate port selects for Depth Expansion
Synchronous internally self timed writes
Available in x18, and x36 configurations
Full Data Coherency, providing most current data
Core V
Available in 165-Ball FBGA package (15 x 17 x 1.4 mm)
Offered in both Pb-free and non Pb-free packages
Variable drive HSTL Output Buffers
JTAG 1149.1 compatible Test Access Port
Delay Lock Loop (DLL) for accurate data placement
Supports concurrent transactions
SRAM uses rising edges only
DD
= 1.8V (±0.1V); IO V
Description
DDQ
x18
x36
= 1.4V to V
198 Champion Court
250 MHz
DD
1100
250
900
72 Mbit QDR
Functional Description
The CY7C1512V18, and CY7C1514V18 are 1.8V Synchronous
Pipelined SRAMs, equipped with QDR
architecture consists of two separate ports: the read port and the
write port to access the memory array. The read port has
dedicated data outputs to support read operations and the write
port has dedicated data inputs to support write operations. QDR
II architecture has separate data inputs and data outputs to
completely eliminate the need to “turnaround” the data bus that
exists with common IO devices. Access to each port is through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is associated with two 18 bit words
(CY7C1512V18), or 36 bit words (CY7C1514V18) that burst
sequentially into or out of the device. Because data can be trans-
ferred into and out of the device on every rising edge of both input
clocks (K and K and C and C), memory bandwidth is maximized
while
“turnarounds”.
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the C or C (or K or K in a single clock
domain) input clocks. Writes are conducted with on-chip
synchronous self timed write circuitry.
200 MHz
200
800
900
simplifying
San Jose
®
,
system
II SRAM Two Word
CA 95134-1709
167 MHz
Burst Architecture
167
750
800
design
Revised August 27, 2009
®
CY7C1512V18
CY7C1514V18
by
II architecture. QDR II
eliminating
408-943-2600
MHz
Unit
mA
bus
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CY7C1514V18-167BZC Summary of contents

Page 1

... DDR interfaces. Each address location is associated with two 18 bit words (CY7C1512V18 bit words (CY7C1514V18) that burst sequentially into or out of the device. Because data can be trans- ferred into and out of the device on every rising edge of both input ...

Page 2

... Logic Block Diagram (CY7C1512V18 [17:0] 21 Address A (20:0) Register K CLK K Gen. DOFF V REF Control WPS Logic BWS [1:0] Logic Block Diagram (CY7C1514V18 [35:0] 20 Address A (19:0) Register K CLK K Gen. DOFF V REF Control WPS Logic BWS [3:0] Document #: 38-05489 Rev. *G Write Write Address Reg ...

Page 3

... Pin Configuration The pin configuration for CY7C1512V18, and CY7C1514V18 follow. Figure 1. 165-Ball FBGA ( 1.4 mm) Pinout /144M D10 D NC D11 Q10 Q11 F NC Q12 D12 G NC D13 Q13 H DOFF V V REF DDQ D14 Q14 L NC Q15 D15 D16 N NC D17 Q16 P NC ...

Page 4

... These address inputs are multiplexed for both read and write operations. Internally, the device is organized arrays each 18) for CY7C1512V18, and arrays each 36) for CY7C1514V18. Therefore, only 21 address inputs are needed to access the entire memory array of CY7C1512V18 and 20 address inputs for CY7C1514V18. These inputs are ignored when the appropriate port is deselected ...

Page 5

... Reference Voltage Input. Static input used to set the reference level for HSTL inputs, outputs, and AC REF Reference measurement points. V Power Supply Power Supply Inputs to the Core of the Device Ground Ground for the Device Power Supply Power Supply Inputs for the Outputs of the Device. DDQ Document #: 38-05489 Rev. *G CY7C1512V18 CY7C1514V18 Pin Description Page [+] Feedback ...

Page 6

... Functional Overview The CY7C1512V18, and CY7C1514V18 are synchronous pipelined Burst SRAMs with a read port and a write port. The read port is dedicated to read operations and the write port is dedicated to write operations. Data flows into the SRAM through the write port and flows out through the read port. These devices multiplex the address inputs to minimize the number of address pins required ...

Page 7

... The DLL may be on page disabled by applying ground to the DOFF pin. For information refer to the application note QDRII/DDRII/QDRII+/DDRII+. Figure 2. Application Example SRAM # 250ohms CQ/CQ Vddq/2 CY7C1512V18 CY7C1514V18 AN5062, DLL Considerations in SRAM # 250ohms CQ/CQ Page [+] Feedback ...

Page 8

... Truth Table The truth table for CY7C1512V18, and CY7C1514V18 follow. Operation Write Cycle: Load address on the rising edge of K; input write data on K and K rising edges. Read Cycle: Load address on the rising edge of K; wait one and a half cycle; read data on C and C rising edges. ...

Page 9

... Write Cycle Descriptions The write cycle description table for CY7C1514V18 follow. BWS BWS BWS BWS L– – L– – L– – L– – L– – L– – Document #: 38-05489 Rev Comments – During the data portion of a write sequence, all four bytes (D the device. L– ...

Page 10

... TAP controller must be moved into the Update-IR state. the instruction register. It also places the instruction register between the TDI and TDO pins and shifts the IDCODE out of the CY7C1512V18 CY7C1514V18 “TAP Controller Block Diagram” when SS on page 16 shows the order in which “ ...

Page 11

... Document #: 38-05489 Rev. *G CY7C1512V18 CY7C1514V18 BYPASS When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO pins. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board ...

Page 12

... IDLE Note 9. The 0/1 next to each state represents the value at TMS at the rising edge of TCK. Document #: 38-05489 Rev. *G [9] 1 SELECT DR-SCAN 0 1 CAPTURE- SHIFT- EXIT1- PAUSE- EXIT2-DR 1 UPDATE- CY7C1512V18 CY7C1514V18 1 SELECT IR-SCAN 0 1 CAPTURE- SHIFT- EXIT1- PAUSE- EXIT2-IR 1 UPDATE- Page [+] Feedback ...

Page 13

... Boundary Scan Register TAP Controller Test Conditions = −2 −100 μ 2 100 μ GND ≤ V ≤ − /2), Undershoot: V (AC) > 1.5V (Pulse width less than t CYC IL CY7C1512V18 CY7C1514V18 Selection TDO Circuitry Min Max Unit 1.4 V 1.6 V 0.4 V 0.2 V 0.65V –0.3 0.35V V DD μA – ...

Page 14

... Test conditions are specified using the load in TAP AC Test Conditions. t Document #: 38-05489 Rev. *G Description [14] Figure 3. TAP Timing and Test Conditions 0.9V 1.8V 50Ω TMSH t TMSS t TDIS t TDIH t TDOV / ns CY7C1512V18 CY7C1514V18 Min Max Unit 50 20 MHz ALL INPUT PULSES 0.9V t TCYC t TDOX Page ...

Page 15

... Places the bypass register between TDI and TDO. This operation does not affect SRAM operation. Document #: 38-05489 Rev. *G Value CY7C1512V18 CY7C1514V18 000 000 11010011010100100 00000110100 00000110100 1 Description CY7C1512V18 CY7C1514V18 Description Version number. Defines the type of SRAM. Allows unique identification of SRAM vendor. 1 Indicates the presence register. Bit Size 109 ...

Page 16

... Bump ID Bit # Bump ID 10G 11F 58 5A 11G 10F 61 4B 11E 62 3A 10E 63 2A 10D 10C 66 3B 11D 11B 70 3C 11C 10B 73 3E 11A 74 2D 10A CY7C1512V18 CY7C1514V18 Bit # Bump 100 2P 101 1P 102 3R 103 4R 104 4P 105 5P 106 5N 107 5R 108 Internal Page [+] Feedback ...

Page 17

... DLL may lock onto an incorrect frequency, causing unstable SRAM behavior. To avoid this, provide1024 cycles stable clock to relock to the desired clock frequency. . REF Figure 4. Power Up Waveforms > 1024 Stable clock Stable DDQ Stable (< +/- 0.1V DC per 50ns ) / DDQ Fix High (or tie to V DDQ ) CY7C1512V18 CY7C1514V18 . KC Var Start Normal Operation Page [+] Feedback ...

Page 18

... During this time V < V and /2)/(RQ/5) for values of 175 ohms <= RQ <= 350 ohms. (max) = 0.95V or 0.54V , whichever is smaller. REF DDQ CY7C1512V18 CY7C1514V18 Test Description Typ Max* Unit Conditions Logical 25°C 320 368 Single Bit Upsets Logical Multi 25° ...

Page 19

... DD Both Ports Deselected, (x36) ≥ V ≤ 1/t , 200MHz (x18) MAX CYC Inputs Static (x36) 167MHz (x18) (x36) Test Conditions CY7C1512V18 CY7C1514V18 Min Typ Max Unit 400 mA 450 380 400 360 370 Min Typ Max Unit V + 0.2 – – V REF – – ...

Page 20

... V 0.75V R = 50Ω REF OUTPUT DEVICE 0.25V 5 pF UNDER ZQ TEST RQ = 250Ω INCLUDING JIG AND (b) SCOPE /I and load capacitance shown in ( CY7C1512V18 CY7C1514V18 Max Unit = 1.5V 5.5 pF DDQ 8 165 FBGA Unit Package 16.3 °C/W 2.1 °C/W [20] ALL INPUT PULSES 1.25V 0.75V SLEW RATE ...

Page 21

... V is 0.5 ns for 200 MHz, and 250 MHz frequencies. AC Test Loads and Waveforms and t less than t . CLZ CHZ CO CY7C1512V18 CY7C1514V18 250 MHz 200 MHz 167 MHz Min Max Min Max Min Max 4.0 8.4 5 ...

Page 22

... In this example, if address A0 = A1, then data Q00 = D10 and Q01 = D11. Write data is forwarded immediately as read results. This note applies to the whole diagram. Document #: 38-05489 Rev. *G WRITE READ WRITE NOP CYC t KHKH D31 D50 D51 D60 Q00 Q01 Q20 t CQDOH t DOH CYC t CCQO t CQOH t CCQO CY7C1512V18 CY7C1514V18 [26, 27, 28] WRITE NOP D61 Q21 Q40 Q41 t CHZ t CQD DON’T CARE UNDEFINED Page [+] Feedback ...

Page 23

... CY7C1512V18-250BZXI 200 CY7C1512V18-200BZC CY7C1514V18-200BZC CY7C1512V18-200BZXC CY7C1514V18-200BZXC CY7C1512V18-200BZI CY7C1512V18-200BZXI CY7C1514V18-200BZXI 167 CY7C1512V18-167BZC CY7C1514V18-167BZC CY7C1512V18-167BZXC CY7C1514V18-167BZXC CY7C1514V18-167BZI CY7C1512V18-167BZXI Document #: 38-05489 Rev. *G www.cypress.com Package Diagram Package Type 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) 51-85195 165-Ball Fine Pitch Ball Grid Array ( 1.4 mm) Pb-Free 51-85195 165-Ball Fine Pitch Ball Grid Array ( ...

Page 24

... Package Diagram Document #: 38-05489 Rev. *G Figure 7. 165-Ball FBGA ( 1.4 mm) CY7C1512V18 CY7C1514V18 51-85195 *B Page [+] Feedback ...

Page 25

... Document History Page Document Title: CY7C1512V18/CY7C1514V18, 72 Mbit QDR Document Number: 38-05489 Orig. Of Submission Revision ECN Change Date ** 201260 NJY See ECN *A 257089 NJY See ECN *B 319496 SYT See ECN *C 403231 NXR See ECN *D 467290 NXR See ECN Document #: 38-05489 Rev. *G ® ...

Page 26

... Document History Page Document Title: CY7C1512V18/CY7C1514V18, 72 Mbit QDR Document Number: 38-05489 *E 2511080 VKN/AESA See ECN *F 2549270 PYRS 08/06/08 *G 2756998 VKN 08/28/09 Sales, Solutions, and Legal Information Worldwide Sales and Design Support Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office closest to you, visit us at cypress ...

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