CY7C1474BV25-167BGC Cypress Semiconductor Corp, CY7C1474BV25-167BGC Datasheet - Page 10

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CY7C1474BV25-167BGC

Manufacturer Part Number
CY7C1474BV25-167BGC
Description
IC SRAM 72MBIT 167MHZ 209FBGA
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1474BV25-167BGC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
72M (1M x 72)
Speed
167MHz
Interface
Parallel
Voltage - Supply
2.375 V ~ 2.625 V
Operating Temperature
0°C ~ 70°C
Package / Case
209-FBGA
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1474BV25-167BGC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
CY7C1474BV25-167BGCT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Table 4. Truth Table
The truth table for CY7C1470BV25, CY7C1472BV25, and CY7C1474BV25 follows.
Notes
Document #: 001-15032 Rev. *D
Deselect Cycle
Continue Deselect Cycle
Read Cycle
(Begin Burst)
Read Cycle
(Continue Burst)
NOP/Dummy Read
(Begin Burst)
Dummy Read
(Continue Burst)
Write Cycle
(Begin Burst)
Write Cycle
(Continue Burst)
NOP/Write Abort
(Begin Burst)
Write Abort
(Continue Burst)
Ignore Clock Edge (Stall)
Sleep Mode
1. X = “Don't Care”, H = Logic HIGH, L = Logic LOW, CE stands for ALL Chip Enables active. BW
2. Write is defined by WE and BW
3. When a write cycle is detected, all IOs are tri-stated, even during Byte Writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device powers up deselected with the IOs in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a Read cycle DQ
signifies that the desired Byte Write Selects are asserted, see
inactive or when the device is deselected, and DQ
Operation
[a:d]
. See
“Partial Write Cycle Description” on page 11
Address
External
External
External
Current
Used
None
None
None
None
Next
Next
Next
Next
s
= data when OE is active.
“Partial Write Cycle Description” on page 11
CE
H
X
X
X
X
X
X
X
L
L
L
L
ZZ
H
L
L
L
L
L
L
L
L
L
L
L
ADV/LD
H
H
H
H
H
X
X
L
L
L
L
L
for details.
WE
CY7C1472BV25, CY7C1474BV25
H
H
X
X
X
X
X
L
X
L
X
X
x
= L signifies at least one Byte Write Select is active, BW
BW
[1, 2, 3, 4, 5, 6, 7]
X
H
H
X
X
X
X
X
X
L
L
X
x
for details.
OE
H
H
X
X
L
L
X
X
X
X
X
X
CEN
H
L
L
L
L
X
L
L
L
L
L
L
s
and DQP
CY7C1470BV25
CLK
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
L-H
X
[a:d]
= tri-state when OE is
Data Out (Q)
Data Out (Q)
Data In (D)
Data In (D)
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Tri-State
Page 10 of 29
DQ
x
= Valid
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