IDT70T3339S133BFI IDT, Integrated Device Technology Inc, IDT70T3339S133BFI Datasheet - Page 2

• Manufacturer Part Number: IDT70T3339S133BFI
• Description: IC SRAM 9MBIT 133MHZ 208FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT70T3339S133BFI

• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Synchronous
• Memory Size: 9M (512K x 18)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 2.4 V ~ 2.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 208-FBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 70T3339S133BFI; 800-1378

Description:
synchronous Dual-Port RAM. The memory array utilizes Dual-Port
memory cells to allow simultaneous access of any address from both ports.
Registers on control, data, and address inputs provide minimal setup and
hold times. The timing latitude provided by this approach allows systems
to be designed with very short cycle times. With an input data register, the
IDT70T3339/19/99 has been optimized for applications having unidirec-
IDT70T3339/19/99S
High-Speed 2.5V 512/256/128K x 18 Dual-Port Static RAM
The IDT70T3339/19/99 is a high-speed 512/256/128k x 18 bit
6.42
2
tional or bidirectional data flow in bursts. An automatic power down feature,
controlled by CE
enter a very low standby power mode.
3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power
supply for the core of the device (V
The IDT70T3339/19/99 can support an operating voltage of either
0
Industrial and Commercial Temperature Ranges
and CE
1,
permits the on-chip circuitry of each port to
DD
) is at 2.5V.