1N4448WSF-7 Diodes Inc., 1N4448WSF-7 Datasheet - Page 2

• Manufacturer Part Number: 1N4448WSF-7
• Description: Diodes - General Purpose, Power, Switching Switching Diode BVR 100V,SOD323F,3K
• Manufacturer: Diodes Inc.

Specifications of 1N4448WSF-7

• Rohs: yes
• Product: Switching Diodes
• Peak Reverse Voltage: 75 V
• Forward Continuous Current: 500 mA
• Max Surge Current: 4 A
• Configuration: Single
• Recovery Time: 4 ns
• Forward Voltage Drop: 1.25 V
• Maximum Reverse Leakage Current: 2.5 uA
• Maximum Power Dissipation: 400 mW
• Operating Temperature Range: - 65 C to + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOD-323F
• Maximum Diode Capacitance: 4 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C

Maximum Ratings
Thermal Characteristics
Electrical Characteristics
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 4)
Thermal Resistance Junction to Ambient Air (Note 4)
Operating and Storage Temperature Range
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes:
1N4448WSF
Document number: DS35380 Rev. 3 - 2
4. Part mounted on FR-4 PC board with minimum recommended pad layouts, which can be found on our website at http://www/diodes.com.
5. Short duration pulse test used to minimize self-heating.
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
A
= 25°C unless otherwise specified
@ t = 1.0μs
@ t = 1.0s
www.diodes.com
Symbol
V
2 of 4
(BR)R
V
C
I
t
R
rr
F
T
Symbol
Symbol
T
V
V
J
V
R(RMS)
R
V
I
, T
I
RWM
V
FSM
P
RRM
I
FM
θ JA
RM
O
R
D
STG
0.62
Min
75
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.855
Max
0.72
1.25
1.0
2.5
4.0
4.0
⎯
50
30
25
-65 to +150
Value
Value
Unit
100
500
250
400
313
0.5
75
53
μA
μA
μA
nA
pF
ns
V
V
4
I
I
I
I
I
V
V
V
V
V
I
I
R
F
F
F
F
F
rr
R
R
R
R
R
= 5.0mA
= 10mA
= 100mA
= 150mA
= I
= 0.1 x I
= 100μA
= 75V
= 75V, T
= 25V, T
= 20V
= 0, f = 1.0MHz
R
= 10mA,
Test Condition
R
1N4448WSF
, R
J
J
= 150°C
= 150°C
L
= 100Ω
© Diodes Incorporated
°C/W
Unit
Unit
mW
mA
mA
°C
V
V
V
A
August 2011