MR0A16ACYS35 EverSpin Technologies Inc, MR0A16ACYS35 Datasheet - Page 4
MR0A16ACYS35
Manufacturer Part Number
MR0A16ACYS35
Description
IC MRAM 1MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Specifications of MR0A16ACYS35
Memory Size
1M (64K x 16)
Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Memory Configuration
64K X 16
Access Time
35ns
Supply Voltage Range
3V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1005
MR0A16ACYS35
MR0A16ACYS35
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MR0A16ACYS35
Manufacturer:
ON
Quantity:
36 000
Electrical Specifications
4
Power supply voltage
Write inhibit voltage
Input high voltage
Input low voltage
Operating temperature
NOTES:
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Maximum magnetic field during read or standby
NOTES:
Supply voltage
Voltage on any pin
Output current per pin
Package power dissipation
Temperature under bias
Storage temperature
Lead temperature during solder (3 minute max)
Maximum magnetic field during write
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
1
2
3
1
2
3
After power up or if V
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if V
falls below minimum V
V
V
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic
fields could affect device reliability.
All voltages are referenced to V
Power dissipation capability depends on package characteristics and use environment.
IH
IL
(min) = –0.5 Vdc; V
(max) = V
2
Parameter
DD
2
+ 0.3 Vdc; V
MR0A16A Advanced Information Data Sheet, Rev. 0
Parameter
DD
WI
IL
3
.
falls below V
(min) = –2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
Table 3. Absolute Maximum Ratings
IH
Table 4. Operating Conditions
(max) = V
SS
.
WI
, a waiting period of 2 ms must be observed, and E and W
DD
+ 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
Symbol
V
V
V
V
T
DD
WI
IH
IL
A
H
H
–0.5
Symbol
3.0
Min
-40
-40
2.5
2.2
max_write
max_read
T
0
T
V
I
T
V
P
Lead
Out
Bias
1
DD
stg
3
In
D
1
Typ
3.3
2.7
—
—
–0.5 to V
–0.5 to 4.0
–45 to 110
–55 to 150
–10 to 85
–45 to 95
Freescale Semiconductor
Value
0.600
±20
260
100
100
100
15
25
25
DD
V
Max
3.0
0.3
105
3.6
DD
0.8
70
85
+ 0.5
DD
1
2
+
Unit
Unit
mA
Oe
Oe
˚C
˚C
˚C
˚C
W
V
V
V
V
V
V