CAT24C02YI-GT3 ON Semiconductor, CAT24C02YI-GT3 Datasheet - Page 3
![IC EEPROM 2KBIT 400KHZ 8TSSOP](/photos/7/25/72557/cat24c02yi-gt3_sml.jpg)
CAT24C02YI-GT3
Manufacturer Part Number
CAT24C02YI-GT3
Description
IC EEPROM 2KBIT 400KHZ 8TSSOP
Manufacturer
ON Semiconductor
Specifications of CAT24C02YI-GT3
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
2K (256 x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Organization
256 K x 8
Interface Type
I2C
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.7 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
1.8 V , 2.5 V , 3.3 V , 5 V
Density
2Kb
Access Time (max)
900ns
Frequency (max)
400KHz
Write Protection
Yes
Data Retention
100Year
Operating Supply Voltage (typ)
1.8/2.5/3.3/5V
Package Type
TSSOP
Operating Temp Range
-40C to 85C
Supply Current
2mA
Operating Supply Voltage (min)
1.7V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
8
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
24C02YI-GT3
CAT24C02YI-GT3TR
CAT24C02YI-GT3TR
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Manufacturer
Quantity
Price
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Manufacturer:
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Part Number:
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4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
5. When not driven, the WP, A0, A1 and A2 pins are pulled down to GND internally. For improved noise immunity, the internal pull−down is
6. Test conditions according to “AC Test Conditions” table.
7. Tested initially and after a design or process change that affects this parameter.
8. t
Table 4. PIN IMPEDANCE CHARACTERISTICS
(V
Table 5. A.C. CHARACTERISTICS
(Note 6) (V
t
PU
CC
and JEDEC test methods.
relatively strong; therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To
conserve power, as the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak
current source.
t
T
PU
F
Symbol
I
i
(Notes 7, 8)
C
t
t
t
t
t
= 1.8 V to 5.5 V, T
t
t
WP
I
HD:DAT
SU:STO
HD:STA
SU:STA
SU:DAT
(Note 6)
(Note 6)
SU:WP
HD:WP
t
A
F
t
Symbol
IN
t
is the delay between the time V
HIGH
t
LOW
BUF
t
t
WR
SCL
DH
t
AA
(Note 5)
R
(Note 4)
(Note 5)
CC
= 1.8 V to 5.5 V, T
Clock Frequency
START Condition Hold Time
Low Period of SCL Clock
High Period of SCL Clock
START Condition Setup Time
Data In Hold Time
Data In Setup Time
SDA and SCL Rise Time
SDA and SCL Fall Time
STOP Condition Setup Time
Bus Free Time Between STOP and START
SCL Low to Data Out Valid
Data Out Hold Time
Noise Pulse Filtered at SCL and SDA Inputs
WP Setup Time
WP Hold Time
Write Cycle Time
Power−up to Ready Mode
A
SDA Pin Capacitance
Other Pins
WP Input Current
Address Input Current
(A0, A1, A2)
Product Rev H
= −40°C to +125°C and V
A
Parameter
= −40°C to +125°C and V
CC
is stable and the device is ready to accept commands.
Parameter
CC
= 1.7 V to 5.5 V, T
http://onsemi.com
CC
V
= 1.7 V to 5.5 V, T
IN
= 0 V, f = 1.0 MHz, V
3
V
V
V
V
V
V
IN
IN
IN
IN
IN
IN
A
= −40°C to +85°C, unless otherwise specified.)
< V
< V
< V
< V
< V
< V
Conditions
V
V
IH
IH
IH
IH
IH
IH
IN
IN
, V
, V
, V
, V
, V
, V
> V
> V
CC
CC
CC
CC
CC
CC
A
= −40°C to +85°C, unless otherwise specified.)
IH
IH
= 5.5 V
= 3.3 V
= 1.7 V
= 5.5 V
= 3.3 V
= 1.7 V
CC
Min
250
100
4.7
4.7
4.7
2.5
4
4
0
4
0
= 5.0 V
Standard
1000
Max
100
300
100
3.5
5
1
Min
100
100
0.6
1.3
0.6
0.6
0.6
1.3
2.5
0
0
Max
Fast
130
120
80
50
35
25
8
6
2
2
Max
400
300
300
100
0.9
5
1
Units
Units
kHz
pF
pF
mA
mA
ms
ms
ms
ms
ms
ms
ms
ns
ns
ns
ms
ms
ms
ns
ns
ms
ms