CAT24C04YI-GT3 ON Semiconductor, CAT24C04YI-GT3 Datasheet - Page 2
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CAT24C04YI-GT3
Manufacturer Part Number
CAT24C04YI-GT3
Description
IC EEPROM 4KBIT 400KHZ 8TSSOP
Manufacturer
ON Semiconductor
Datasheet
1.CAT24C02YI-GT3.pdf
(16 pages)
Specifications of CAT24C04YI-GT3
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
4K (512 x 8)
Speed
400kHz
Interface
I²C, 2-Wire Serial
Voltage - Supply
1.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Organization
512 x 8
Interface Type
I2C
Maximum Clock Frequency
0.4 MHz
Access Time
900 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
1.7 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
1.8 V , 2.5 V , 3.3 V , 5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
24C04YI-GT3
CAT24C04YI-GT3TR
CAT24C04YI-GT3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CAT24C04YI-GT3
Manufacturer:
ON Semiconductor
Quantity:
5 550
Part Number:
CAT24C04YI-GT3
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. During input transitions, voltage undershoot on any pin should not exceed −1 V for more than 20 ns. Voltage overshoot on pins A
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
Table 3. D.C. OPERATING CHARACTERISTICS
(V
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Storage Temperature
Voltage on any pin with respect to Ground (Note 1)
Symbol
I
I
and WP should not exceed V
maximum ratings, irrespective of V
and JEDEC test methods.
CC
CCW
V
CCR
V
V
I
N
SB
OL
I
IH
IL
L
END
= 1.8 V to 5.5 V, T
Symbol
T
(Note 3)
DR
Voltage
Read Current
Write Current
Input Low Voltage
Input High Voltage
Output Low
I/O Pin Leakage
Standby Current
Parameter
CC
= 5 V, 25°C.
A
Endurance
Data Retention
= −40°C to +125°C and V
CC
+ 1 V for more than 20 ns, while voltage on the I
All I/O Pins at GND or V
V
V
CC
Read, f
Write, f
CC
CC
A
Parameters
Pin at GND or V
.
0
> 2.5 V, I
< 2.5 V, I
SCL and SDA
, A
1
Parameter
SCL
SCL
, A
2
= 400 kHz
= 400 kHz
and WP
OL
OL
CC
(Note 2)
= 3 mA
= 1 mA
Test Conditions
= 1.7 V to 5.5 V, T
CC
http://onsemi.com
CC
T
V
T
V
T
2
A
A
A
CC
CC
= −40°C to +85°C
= −40°C to +85°C
= −40°C to +125°C
≤ 3.3 V
> 3.3 V
A
= −40°C to +85°C, unless otherwise specified.)
2
C bus pins, SCL and SDA, should not exceed the absolute
1,000,000
Min
100
0.7 x V
0.7 x V
−0.5
Min
CC
CC
−65 to +150
−0.5 to +6.5
Ratings
Program / Erase Cycles
0.3 x V
V
CC
Max
5.5
0.4
0.2
2
1
1
3
5
+ 0.5
2
Units
Years
CC
Units
0
Units
mA
mA
, A
mA
°C
mA
V
V
V
1
, A
2