M93C46-WDW6TP STMicroelectronics, M93C46-WDW6TP Datasheet - Page 15
![IC EEPROM 1KBIT 2MHZ 8TSSOP](/photos/5/43/54342/497-8-tssop_sml.jpg)
M93C46-WDW6TP
Manufacturer Part Number
M93C46-WDW6TP
Description
IC EEPROM 1KBIT 2MHZ 8TSSOP
Manufacturer
STMicroelectronics
Specifications of M93C46-WDW6TP
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
1K (128 x 8 or 64 x 16)
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-TSSOP
Organization
128 K x 8
Interface Type
Microwire
Maximum Clock Frequency
2 MHz
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2.5 V
Maximum Operating Current
2 mA
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Operating Supply Voltage
2.5 V, 5.5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8655-2
M93C46-WDW6TP
M93C46-WDW6TP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M93C46-WDW6TP
Manufacturer:
STMicroelectronics
Quantity:
28 615
Company:
Part Number:
M93C46-WDW6TP
Manufacturer:
SANYO
Quantity:
2 449
Part Number:
M93C46-WDW6TP
Manufacturer:
ST
Quantity:
20 000
M93C86, M93C76, M93C66, M93C56, M93C46
5.3
Figure 4.
1. For the meanings of An, Xn, Qn and Dn, see
Erase Byte or Word
The Erase Byte or Word (ERASE) instruction sets the bits of the addressed memory byte (or
word) to 1. Once the address has been correctly decoded, the falling edge of the Chip
Select Input (S) starts the self-timed Erase cycle. The completion of the cycle can be
detected by monitoring the READY/BUSY line, as described in the
section.
Read
Write
Write
Enable
READ, WRITE, WEN, WDS sequences
S
Q
S
S
Q
D
D
D
1 0
1
1 1 0 An
CODE
CODE
CODE
OP
0
OP
OP
1
0
1
An
1
ADDR
ADDR
Doc ID 4997 Rev 11
Xn X0
A0
A0
Qn
Dn
Table
5.,
DATA OUT
DATA IN
Table 6.
Write
Disable
and
Table
S
D
D0
Q0
7..
BUSY
READY/BUSY status
1
CODE
STATUS
CHECK
0
OP
0
0
0
READY
Xn X0
Instructions
AI00878d
15/36