1N5407-G Comchip Technology, 1N5407-G Datasheet

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1N5407-G

Manufacturer Part Number
1N5407-G
Description
Diodes - General Purpose, Power, Switching VR=800V, IO=3A
Manufacturer
Comchip Technology
Datasheet

Specifications of 1N5407-G

Rohs
yes
1N5400-G Thru. 1N5408-G
Features
Mechanical data
Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
QW-BG015
General Purpose Silicon Rectifiers
Voltage: 50 to 1000 V
Current: 3.0 A
RoHS Device
Maximum re
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
.375”(9.5mm) Lead length
Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
Maximum instantaneous forward voltage @3.0A
Maximum
at rated DC blocking voltage
Operating temperature range
Storage temperature range
NOTES:
Typical thermal resistance (Note 1)
1. Thermal resistance from junction to ambient 0.375” (9.5mm) lead length.
-High surge current capability.
-Low forward voltage drop.
-High reliability.
-High current capability.
-Case: Molded plastic
-Epoxy: UL 94V-0 rate flame retardant
-Polarity: Color band denotes cathode end
-Lead: Axial leads, solderable per MIL-STD-202,
-Mounting position: Any
-Weight: 1.2 grams
method 208 guaranteed
DC
petitive
reverse current
Parameter
peak reverse voltage
@T
@T
@T
J
J
=25°C
=100°C
A
=75°C
Symbol
V
V
R
T
I
V
I
F(AV)
FSM
V
T
I
RRM
RMS
STG
R
θJA
DC
F
J
1N5400
-G
50
35
50
1N5401
100
100
-G
70
1N5402
200
140
200
-G
Dimensions in inches and (millimeter)
-65 to +125
-65 to +150
1.000(25.40) Min.
0.375(9.53)
0.335(8.51)
1.000(25.40) Min.
1N5404
DO-27 (DO-201AD)
400
280
400
200
100
(at T
3.0
1.0
5.0
-G
18
A
=25°C unless otherwise noted)
1N5406
600
420
600
-G
0.052(1.32)
0.048(1.22)
1N5407
0.220(5.60)
0.197(5.00)
800
560
800
-G
DIA.
1N5408
DIA.
1000
1000
700
-G
Unit
°C/W
Page 1
μA
REV:A
°C
°C
V
V
V
A
A
V

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1N5407-G Summary of contents

Page 1

... STG DO-27 (DO-201AD) 0.052(1.32) DIA. 0.048(1.22) 1.000(25.40) Min. 0.375(9.53) 0.335(8.51) 0.220(5.60) DIA. 0.197(5.00) 1.000(25.40) Min. Dimensions in inches and (millimeter) (at T =25°C unless otherwise noted) A 1N5404 1N5406 1N5407 1N5408 - 400 600 800 1000 280 420 560 700 400 600 800 1000 3 ...

Page 2

General Purpose Silicon Rectifiers Rating and Characteristic Curves (1N5400-G Thru. 1N5408-G) Fig.1 - Maximum Forward Current Derating Curve 3.0 2.0 1.0 Single phase half wave 60Hz Resistive or inductive load 0.375” (9.5mm) lead length 100 ...

Page 3

General Purpose Silicon Rectifiers Taping Specification For Axial Lead Diodes SYMBOL DO-27 (mm) 10.00 ± 0.50 (DO-201AD) (inch) 0.394 ± 0.020 SYMBOL DO-27 (mm) 85.70 ± 0.30 (DO-201AD) (inch) 3.374 ± 0.012 ...

Page 4

... General Purpose Silicon Rectifiers Marking Code Marking code Part Number 1N5400-G 1N5400 1N5401-G 1N5401 1N5402-G 1N5402 1N5404 1N5404-G 1N5406-G 1N5406 1N5407-G 1N5407 1N5408-G 1N5408 1N5400T-G 1N5400 1N5401T-G 1N5401 1N5402T-G 1N5402 1N5404T-G 1N5404 1N5406T-G 1N5406 1N5407T-G 1N5407 1N5408T-G 1N5408 Standard Packaging AMMO PACK ...

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