CY62128ELL-55ZAXE Cypress Semiconductor Corp, CY62128ELL-55ZAXE Datasheet - Page 4
![IC SRAM 1MBIT 55NS 32STSOP](/photos/7/23/72388/428-32-tsop_sml.jpg)
CY62128ELL-55ZAXE
Manufacturer Part Number
CY62128ELL-55ZAXE
Description
IC SRAM 1MBIT 55NS 32STSOP
Manufacturer
Cypress Semiconductor Corp
Type
Asynchronousr
Datasheet
1.CY62128ELL-45SXI.pdf
(14 pages)
Specifications of CY62128ELL-55ZAXE
Memory Size
1M (128K x 8)
Package / Case
32-sTSOP
Format - Memory
RAM
Memory Type
SRAM
Speed
55ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Access Time
55 ns
Supply Voltage (max)
5.5 V
Supply Voltage (min)
4.5 V
Maximum Operating Current
35 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Number Of Ports
1
Operating Supply Voltage
5 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
CY62128ELL-55ZAXE
Manufacturer:
CYPRESS
Quantity:
2 300
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55°C to +125°C
Supply Voltage to Ground
Potential............................... –0.5V to 6.0V (V
DC Voltage Applied to Outputs
in High-Z State
DC Input Voltage
Electrical Characteristics
Capacitance
Notes
Document #: 38-05485 Rev. *H
V
V
V
V
I
I
I
I
C
C
5. V
6. V
7. Full device AC operation assumes a 100 s ramp time from 0 to V
8. Only chip enables (CE
9. Tested initially and after any design or process changes that may affect these parameters.
IX
OZ
CC
SB2
Parameter
OH
OL
IH
IL
IN
OUT
IL(min)
IH(max)
[8]
Parameter
= –2.0V for pulse durations less than 20 ns.
= V
CC
Output HIGH
Voltage
Output LOW
Voltage
Input HIGH Voltage V
Input LOW voltage V
Input Leakage
Current
Output Leakage
Current
V
Supply Current
Automatic CE
Power down
Current—CMOS
Inputs
[5, 6]
+ 0.75V for pulse durations less than 20 ns.
CC
[5, 6]
Description
(For all Packages)
Operating
.............. –0.5V to 6.0V (V
1
........... –0.5V to 6.0V (V
and CE
Input Capacitance
Output Capacitance
2
) must be at CMOS level to meet the I
I
I
GND < V
GND < V
f = f
f = 1 MHz
CE
V
f = 0, V
OH
OL
CC
CC
IN
Description
(Over the Operating Range)
[9]
1
= 2.1 mA
max
= –1 mA
> V
= 4.5V to 5.5V
= 4.5V to 5.5V
> V
CC
CC
= 1/t
Test Conditions
CC
O
I
< V
< V
= V
– 0.2V or V
CC(max)
CC(max)
CC(max)
– 0.2V or CE
RC
CC
CC
CC(max)
, Output Disabled
V
I
CMOS levels
OUT
CC
+ 0.5V)
+ 0.5V)
+ 0.5V)
CC
= V
= 0 mA
IN
(min) and 200 s wait time after V
T
V
SB2
CC(max)
2
< 0.2V,
A
CC
< 0.2V,
= 25°C, f = 1 MHz,
/ I
= V
CCDR
CC(typ)
spec. Other inputs can be left floating.
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2001V
(MIL-STD-883, Method 3015)
Latch up Current..................................................... > 200 mA
Operating Range
Test Conditions
CY62128ELL
–0.5
Min
2.4
2.2
–1
–1
45 ns (Ind’l/Auto-A)
Device
Typ
1.3
11
1
[3]
CC
V
Ind’l/Auto-A
CC
stabilization.
Max
Range
Auto-E
0.4
0.8
+1
+1
16
2
4
+ 0.5
–0.5
Min
2.4
2.2
–4
–4
–40°C to +125°C
–40°C to +85°C
55 ns (Auto-E)
CY62128E MoBL
Temperature
Typ
Max
Ambient
10
10
1.3
11
1
[3]
V
CC
Max
0.4
0.8
+4
+4
35
30
4
+ 0.5
4.5V to 5.5V
Unit
Page 4 of 14
pF
pF
V
Unit
mA
A
A
A
CC
V
V
V
V
[7]
®
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