CY14B104N-ZS20XC Cypress Semiconductor Corp, CY14B104N-ZS20XC Datasheet - Page 6

IC NVSRAM 4MBIT 20NS 44TSOP

CY14B104N-ZS20XC

Manufacturer Part Number
CY14B104N-ZS20XC
Description
IC NVSRAM 4MBIT 20NS 44TSOP
Manufacturer
Cypress Semiconductor Corp
Type
NVSRAMr
Datasheet

Specifications of CY14B104N-ZS20XC

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
4M (256K x 16)
Speed
20ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
44-TSOP II
Word Size
16b
Density
4Mb
Interface Type
Parallel
Operating Supply Voltage (typ)
3.3V
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
2.7V
Operating Temp Range
0C to 70C
Pin Count
44
Mounting
Surface Mount
Supply Current
65mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY14B104N-ZS20XC
Manufacturer:
Cypress Semiconductor Corp
Quantity:
135
Table 1. Mode Selection (continued)
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
controlled read operations must be performed:
The AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE
controlled read operations must be performed:
Document #: 001-07102 Rev. *L
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
CE
L
L
L
WE
H
H
H
OE, BHE, BLE
L
L
L
[3]
A
0xB1C7
0x7C1F
0xB1C7
0x7C1F
0x8FC0
0xB1C7
0x7C1F
0x4E38
0x83E0
0x703F
0x4B46
0x4E38
0x83E0
0x703F
0x4E38
0x83E0
0x703F
0x4C63
15
- A
If the AutoStore function is disabled or re-enabled, a manual
STORE operation (hardware or software) must be issued to save
the AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
Data Protection
The CY14B104L/CY14B104N protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when V
is in a write mode (both CE and WE are LOW) at power up, after
a RECALL or STORE, the write is inhibited until the SRAM is
enabled after t
inadvertent writes during power up or brown out conditions.
Noise Considerations
Refer to CY application note AN1064.
0
[7]
AutoStore Enable
Nonvolatile Store
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Read SRAM
Nonvolatile
Recall
LZHSB
Mode
CC
< V
(HSB to output active). This protects against
CY14B104L, CY14B104N
SWITCH
Output High Z
Output High Z
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
Output Data
. If the CY14B104L/CY14B104N
IO
Active I
Active
Active
Page 6 of 25
Power
CC2
[8, 9]
[8, 9]
[8, 9]
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