CY7C1168V18-375BZC Cypress Semiconductor Corp, CY7C1168V18-375BZC Datasheet - Page 15

• Manufacturer Part Number: CY7C1168V18-375BZC
• Description: IC SRAM 18MBIT 375MHZ 165LFBGA
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1168V18-375BZC

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, DDR II
• Memory Size: 18M (1M x 18)
• Speed: 375MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-LFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TAP Controller Block Diagram
TAP Electrical Characteristics
The Tap Electrical Characteristics table over the operating range follows.
Notes
Document Number: 001-06620 Rev. *D
V
V
V
V
V
V
I
10. These characteristics pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
11. Overshoot: V
12. All voltage refer to ground.
X
OH1
OH2
OL1
OL2
IH
IL
Parameter
TDI
TCK
TMS
IH
(AC) < V
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
DDQ
Selection
Circuitry
+ 0.35V (pulse width less than t
Description
106
Figure 3. Tap Controller Block Diagram
31
Boundary Scan Register
CYC
30
.
Identification Register
Instruction Register
/2), undershoot: V
29
.
TAP Controller
.
.
.
.
IL
(AC) >
I
I
I
I
GND ≤ V
OH
OH
OL
OL
Bypass Register
2
2
2
[10, 11, 12]
−
= 2.0 mA
= 100 μA
= −2.0 mA
= −100 μA
0.3V (pulse width less than t
Test Conditions
1
1
1
I
≤ V
0
0
0
0
CY7C1166V18, CY7C1177V18
CY7C1168V18, CY7C1170V18
DD
CYC
0.65 V
Selection
Circuitry
/2).
–0.3
Min
1.4
1.6
−5
DD
V
0.35 V
DD
Max
0.4
0.2
5
+ 0.3
DD
Page 15 of 27
TDO
Unit
μA
V
V
V
V
V
V
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