VS-T110HF60 Vishay Semiconductors, VS-T110HF60 Datasheet - Page 2

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VS-T110HF60

Manufacturer Part Number
VS-T110HF60
Description
Rectifiers 600 Volt 110 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-T110HF60

Product Category
Rectifiers
Rohs
yes
Product
Standard Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
1.35 V
Forward Continuous Current
110 A
Max Surge Current
2100 A
Reverse Current Ir
20000 uA
Mounting Style
Stud
Package / Case
D-55
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
10
T40HF..., T70HF..., T85HF..., T110HF... Series
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
www.vishay.com
2
VOLTAGE RATINGS
TYPE
NUMBER
T40HF...
T70HF...
T85HF...
T110HF...
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle
forward, non-repetitive
surge current
Maximum I
Maximum I
Low level value of
threshold voltage
High level value of
threshold voltage
Low level value of
forward slope resistance
High level value of
forward slope resistance
Maximum forward voltage drop
2
2
t for fusing
√t for fusing
VOLTAGE
CODE
100
120
10
20
40
60
80
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
SYMBOL
V
V
V
I
RRM
PEAK REVERSE VOLTAGE
F(RMS)
I
I
V
F(AV)
I
F(TO)1
F(TO)2
FSM
I
2
r
r
2
FM
f1
f2
√t
t
, MAXIMUM REPETITIVE
180° conduction, half sine wave
t = 10 ms
t = 8.3 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x I
T
(I > π x I
(16.7 % x π x I
T
(I > π x I
I
t
Average power = V
t = 10 ms
FM
p
(T-Modules), 40 A to 110 A
1000
1200
J
J
100
200
400
600
800
= 400 μs square pulse
maximum
maximum
V
Power Rectifier Diodes
= π x I
F(AV)
F(AV)
F(AV)
TEST CONDITIONS
), T
), T
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
, T
F(AV)
F(AV)
J
J
J
maximum
maximum
= 25 °C,
F(TO)
< I < π x I
< I < π x I
RRM
RRM
x I
F(AV)
V
F(AV)
F(AV)
RSM
Sinusoidal
half wave,
initial T
T
J
+ r
maximum
PEAK REVERSE VOLTAGE
),
),
, MAXIMUM NON-REPETITIVE
f
x (I
DiodesEurope@vishay.com
J
F(RMS)
=
)
2
1100
1300
150
300
500
700
900
V
T40HF T70HF
16 300 70 700 148 700 204 300
1630
1500
1150
1050
0.66
0.84
1.30
570
600
480
500
4.3
3.1
40
85
63
1200
1250
1000
1050
7100
6450
5000
4570
0.76
0.95
1.35
110
2.4
1.7
70
85
T85HF
14 500
13 500
10 500
1700
1800
1450
1500
9600
Document Number: 93587
0.68
0.90
1.76
1.08
1.27
134
85
85
Revision: 20-May-10
I
RRM
AT T
T110HF UNITS
20 500
18 600
14 500
13 200
2000
2100
1700
1780
0.68
0.86
1.56
1.12
1.35
110
173
85
MAXIMUM
J
100
μA
= 25 °C
A
A
°C
2
A
A
A
V
V
2
√s
s

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