MR2A16ACYS35 EverSpin Technologies Inc, MR2A16ACYS35 Datasheet - Page 8
MR2A16ACYS35
Manufacturer Part Number
MR2A16ACYS35
Description
IC MRAM 4MBIT 35NS 44TSOP
Manufacturer
EverSpin Technologies Inc
Specifications of MR2A16ACYS35
Memory Size
4M (256K x 16)
Format - Memory
RAM
Memory Type
MRAM (Magnetoresistive RAM)
Speed
35ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
44-TSOP II
Memory Configuration
256K X 16
Access Time
35ns
Supply Voltage Range
3V To 3.6V
Memory Case Style
TSOP
No. Of Pins
44
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
819-1011
MR2A16ACYS35
MR2A16ACYS35
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MR2A16ACYS35
Manufacturer:
EVERSPIN
Quantity:
9 000
Part Number:
MR2A16ACYS35
Manufacturer:
EVERSPI
Quantity:
20 000
Everspin Technologies © 2009
Timing Specifications
Read Mode
1
2
3
Addresses valid before or at the same time E goes low.
Parameter
Read cycle time
Address access time
Enable access time
Output enable access time
Byte enable access time
Output hold from address change
Enable low to output active
Output enable low to output active
Byte enable low to output active
Enable high to output Hi-Z
Output enable high to output Hi-Z
Byte high to output Hi-Z
W is high for read cycle. Power supplies must be properly grounded and decoupled, and bus contention conditions must be
minimized or eliminated during read or write cycles.
This parameter is sampled and not 100% tested. Transition is measured ±200 mV from the steady-state voltage.
2
3
3
3
3
3
3
Table 3.3 Read Cycle Timing
Figure 3.3A Read Cycle 1
Figure 3.3B Read Cycle 2
8
Symbol
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
AVQV
ELQV
GLQV
BLQV
AXQX
ELQX
GLQX
BLQX
EHQZ
GHQZ
BHQZ
Document Number: MR2A16A Rev. 8, 7/2009
Min
35
-
-
-
-
3
3
0
0
0
0
0
1
Max
-
35
35
15
15
-
-
-
-
15
10
10
MR2A16A
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns