CAT24C128LI-G ON Semiconductor, CAT24C128LI-G Datasheet - Page 2

• Manufacturer Part Number: CAT24C128LI-G
• Description: IC EEPROM 128KBIT 400KHZ 8DIP
• Manufacturer: ON Semiconductor

Specifications of CAT24C128LI-G

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 128K (16K x 8)
• Speed: 400kHz
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Organization: 16 K x 8
• Interface Type: I2C
• Maximum Clock Frequency: 0.4 MHz
• Access Time: 900 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 1.8 V
• Maximum Operating Current: 3 mA
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 40 C
• Operating Supply Voltage: 2.5 V, 3.3 V, 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 24C128LI-G

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Page Mode, V
4. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
5. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
Table 1. ABSOLUTE MAXIMUM RATINGS
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS
Table 4. PIN IMPEDANCE CHARACTERISTICS
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
N
C
C
I
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
and JEDEC test methods.
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x V
WP
END
IN
IN
Symbol
Symbol
Symbol
I
V
V
T
I
(Note 4)
(Note 4)
(Note 5)
CCW
CCR
V
I
V
(Note 3)
OL1
OL2
DR
SB
I
L
IH
IL
CC
Endurance
Data Retention
Read Current
Write Current
Standby Current
I/O Pin Leakage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output Low Voltage
SDA I/O Pin Capacitance
Input Capacitance (other pins)
WP Input Current
= 5 V, 25°C
Parameter
Parameter
Parameter
Parameter
All I/O Pins at GND or V
Pin at GND or V
(Note 2)
(V
(V
http://onsemi.com
V
V
CC
CC
CC
CC
Read, f
Write, f
= 1.8 V to 5.5 V, T
= 1.8 V to 5.5 V, T
Test Conditions
< 2.5 V, I
< 2.5 V, I
CC
SCL
SCL
CC
2
CC
+ 1.5 V, for periods of less than 20 ns.
= 400 kHz
= 400 kHz
OL
OL
CC
= 3.0 mA
= 1.0 mA
T
T
), the strong pull−down reverts to a weak current source.
T
T
A
A
A
A
= −40°C to +125°C
= −40°C to +125°C
A
A
= −40°C to +85°C
= −40°C to +85°C
= −40°C to +125°C, unless otherwise specified.)
CC
= −40°C to +125°C, unless otherwise specified.)
+ 0.5 V. During transitions, the voltage on any pin may
1,000,000
Min
100
Conditions
V
V
V
V
IN
IN
IN
IN
= 0 V
= 0 V
< V
> V
IH
IH
V
CC
−65 to +150
−0.5 to +6.5
−0.5
Min
Rating
Program / Erase Cycles
x 0.7
Years
V
Units
V
CC
CC
Max
Max
200
0.4
0.2
8
6
1
1
3
1
2
1
2
x 0.3
+ 0.5
Units
Units
Units
mA
mA
mA
mA
°C
pF
pF
mA
mA
V
V
V
V
V