VS-30EPH06HN3 Vishay Semiconductors, VS-30EPH06HN3 Datasheet - Page 4

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VS-30EPH06HN3

Manufacturer Part Number
VS-30EPH06HN3
Description
Rectifiers 30 Amp 600 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-30EPH06HN3

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.6 V
Recovery Time
35 ns
Forward Continuous Current
30 A
Max Surge Current
300 A
Reverse Current Ir
50 uA
Mounting Style
Through Hole
Package / Case
TO-247AC Modified
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Tradename
FRED Pt
Note
(1)
Revision: 28-Mar-12
Formula used: T
Pd = Forward power loss = I
Pd
REV
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
180
160
140
120
100
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
80
90
80
70
60
50
40
30
20
10
Fig. 5 - Maximum Allowable Case Temperature vs.
0
= Inverse power loss = V
0
0
0
Fig. 6 - Forward Power Loss Characteristics
Square wave (D = 0.50)
Rated V
See note (1)
I
I
F(AV)
F(AV)
5
5
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C
10
10
- Average Forward Current (A)
- Average Forward Current (A)
R
Average Forward Current
= T
applied
DC
J
15
15
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- (Pd + Pd
20
20
F(AV)
R1
25
DC
25
REV
x V
RMS limit
x I
) x R
FM
30
30
R
(1 - D); I
at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
thJC
35
35
F(AV)
;
40
40
R
/D) (see fig. 6);
at V
45
45
R1
= Rated V
New Product
R
4
1200
1000
800
600
400
200
90
80
70
60
50
40
30
20
10
0
0
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
www.vishay.com/doc?91000
V
T
T
V
T
T
Fig. 8 - Typical Stored Charge vs. dI
J
J
J
J
R
R
I
I
= 125 °C
= 25 °C
= 125 °C
= 25 °C
F
F
= 200 V
= 200 V
= 30 A
= 15 A
Vishay Semiconductors
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
VS-30EPH06HN3
DiodesEurope@vishay.com
Document Number: 94371
I
I
F
F
= 30 A
= 15 A
F
/dt
1000
1000
F
/dt

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