RB521S-30 RKG Taiwan Semiconductor, RB521S-30 RKG Datasheet - Page 2

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RB521S-30 RKG

Manufacturer Part Number
RB521S-30 RKG
Description
Schottky Diodes & Rectifiers Low VF SMD Schottky Barrier Diode
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of RB521S-30 RKG

Rohs
yes
Rating at 25°C ambient temperature unless otherwise specified.
Type Number
Reverse Breakdown Voltage
Forward Voltage
Reverse Leakage Current
Small Signal Diode
Maximum Ratings
Carrier & Reel specification
D
Any Additional Label (If Required)
T
C
d
A
TSC label
B
Carieer Tape
Top Cover Tape
P1
P0
D2
V
I
I
R
R
F
W1
=
=
=
D1
500uA
200mA
10V
F
E
W
200mW, Low V
Symbol
V
V
I
(BR)
R
Carrier width
Carrier length
Carrier depth
Sprocket hole
Reel outside diameter
Reel inner diameter
Feed hole width
Sprocke hole position
Punch hole position
Sprocke hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
F
Item
Min
F
30
-
-
SMD Schottky Barrier Diode
User Direction of Feed
Symbol
Max
0.50
W1
D1
D2
P0
P1
W
30
C
D
A
B
d
E
F
T
-
Dimension
3.15 ±0.10
3.94 ±0.05
1.35 ±0.10
1.75 ±0.10
54.4 ±0.40
13.0 ±0.20
1.75 ±0.10
3.50 ±0.05
4.00 ±0.10
2.00 ±0.05
0.22 ±0.05
8.10 ±0.20
12.3 ±0.20
178 ±1
(mm)
RB521S-30
Version : A11
Units
μA
V
V

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