GKR130/12 GeneSiC Semiconductor, GKR130/12 Datasheet
GKR130/12
Manufacturer Part Number
GKR130/12
Description
Rectifiers Standard Recovery - 1200 V - 165 A - DO-8
Manufacturer
GeneSiC Semiconductor
Datasheet
1.GKR13008.pdf
(2 pages)
Specifications of GKR130/12
Rohs
yes
Factory Pack Quantity
5
www.genesicsemi.com
Features
• High Surge Capability
• Types up to 1800 V V
• Equivalent to SKR130 Series
Maximum ratings, at T
Repetitive peak reverse voltage V
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Diode forward voltage
Reverse current
Thermal characteristics
Thermal resistance, junction -
case
Silicon Standard
Recovery Diode
p
Parameter
p
RRM
j
= 25 °C, unless otherwise specified (GKN has leads reversed)
g
Symbol
Symbol
R
I
V
T
F,SM
V
RRM
I
I
T
thJC
DC
stg
R
F
F
j
V
T
I
C
R
F
= 25 °C, t
= V
= 60 A, T
Conditions
Conditions
T
RRM
C
≤ 100 °C
, T
p
j
j
= 25 °C
= 180 °C
= 10 ms
GKR130/04 GKR130/08
GKR130/04 GKR130/08
-40 to 180 -40 to 180
-55 to 180 -55 to 180
2500
0.35
400
400
165
1.5
22
1
GKR
2500
0.35
800
800
165
1.5
22
2
1
GKR130/04 thru GKR130/18
GKR130/12
GKR130/12
-40 to 180
-55 to 180
1200
1200
2500
0.35
165
1.5
22
V
I
F
1
RRM
=165 A
GKR130/14
GKR130/14
-40 to 180
-55 to 180
= 400 V - 1800 V
DO-8 Package
1400
1400
2500
0.35
165
1.5
22
GKR130/16GKR130/18Unit
GKR130/16GKR130/18Unit
-40 to 180 -40 to 180 °C
-55 to 180 -55 to 180 °C
1600
1600
2500
0.35
165
1.5
22
1800
1800
2500
0.35
165
1.5
22
2
K/W
mA
V
V
A
A
V
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GKR130/12 Summary of contents
Page 1
... GKR130/12 GKR130/14 GKR130/16GKR130/18Unit 1.5 1.5 1.5 1 0.35 0.35 0.35 0.35 2 1800 V 1800 V 165 A ...
Page 2
Fig 1: Forward Characteristics Fig 3: Transient Thermal Impedence vs Time www.genesicsemi.com GKR130/04 thru GKR130/18 Fig 2: Forward Current vs Case Temp Fig 4: Power Dissipation vs Forward Current 2 ...