93C46C-E/P Microchip Technology, 93C46C-E/P Datasheet - Page 7
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93C46C-E/P
Manufacturer Part Number
93C46C-E/P
Description
IC EEPROM 1KBIT 3MHZ 8DIP
Manufacturer
Microchip Technology
Datasheet
1.93C46BTSN.pdf
(34 pages)
Specifications of 93C46C-E/P
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
1K (128 x 8 or 64 x 16)
Speed
3MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2.4
The ERASE instruction forces all data bits of the
specified address to the logical ‘1’ state. CS is brought
low following the loading of the last address bit. This
falling edge of the CS pin initiates the self-timed
programming cycle, except on ‘93C’ devices where the
rising edge of CLK before the last address bit initiates
the write cycle.
FIGURE 2-1:
FIGURE 2-2:
2010 Microchip Technology Inc.
CLK
DO
CLK
DO
CS
DI
CS
DI
Erase
High-Z
93AA46A/B/C, 93LC46A/B/C, 93C46A/B/C
High-Z
1
1
ERASE TIMING FOR 93AA AND 93LC DEVICES
ERASE TIMING FOR 93C DEVICES
1
1
1
1
A
A
N
N
A
A
N
N
-1 A
-1 A
N
N
-2
-2
•••
•••
A0
The DO pin indicates the Ready/
device if CS is brought high after a minimum of 250 ns
low (T
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been erased and
the device is ready for another instruction.
A0
Note:
T
T
CSL
CSL
CSL
). DO at logical ‘0’ indicates that programming
After the Erase cycle is complete, issuing
a Start bit and then taking CS low will clear
the Ready/
T
WC
T
T
T
SV
WC
Check Status
SV
Check Status
Busy
Busy
Busy
status from DO.
Ready
Ready
Busy
DS21749H-page 7
High-Z
High-Z
status of the
T
T
CZ
CZ