STW36N55M5 STMicroelectronics, STW36N55M5 Datasheet - Page 12

• Manufacturer Part Number: STW36N55M5
• Description: MOSFET N-Ch 550V 0.06 Ohm 33A MDmesh V FET
• Manufacturer: STMicroelectronics

Specifications of STW36N55M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 20.8 A
• Resistance Drain-source Rds (on): 0.08 Ohms
• Configuration: Single
• Mounting Style: Through Hole
• Package / Case: TO-247
• Gate Charge Qg: 72 nC
• Power Dissipation: 190 W

Package mechanical data
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Table 10.
Dim.
∅P
∅R
A1
b1
b2
L1
L2
A
D
E
S
b
c
e
L
TO-247 mechanical data
19.85
15.45
14.20
Min.
4.85
2.20
0.40
5.30
3.70
3.55
4.50
5.30
1.0
2.0
3.0
Doc ID 022902 Rev 2
18.50
mm.
Typ.
5.45
5.50
STP36N55M5, STW36N55M5
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
5.60
4.30
3.65
5.50
5.70