IRGP4660D-EPBF International Rectifier, IRGP4660D-EPBF Datasheet - Page 7

• Manufacturer Part Number: IRGP4660D-EPBF
• Description: IGBT Transistors 600V UltraFast IGBT 60A 330W 140nC
• Manufacturer: International Rectifier

Specifications of IRGP4660D-EPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 70 uA
• Power Dissipation: 134 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 76 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

0.0001
0.001
0.001
0.01
0.01
0.1
0.1
10
1E-006
1E-006
1
1
D = 0.50
D = 0.50
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
0.20
0.10
0.01
0.02
0.02
0.01
0.05
0.20
0.05
0.10
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-005
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001
0.0001

J


J
J


1
Ci= iRi
J


1
1
Ci
Ci= iRi

1
Ci
iRi
R
iRi
1
R
R
1
1
R
1

2
R


0.001
0.001
2
2
2
R

R
2
2
2
R
2
R

3
3
R
R


3
3
3
3
R

3
3

Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc


4
R
4
R
4

4
4
R
4

4
C


C
Ri (°C/W) i (sec)

0.01041
0.15911
0.23643
0.15465
0.01
Ri (°C/W) i (sec)
0.01
0.01716
0.35875
0.41334
0.20121
0.000006
0.000142
0.002035
0.013806
0.000031
0.000517
0.004192
0.024392
0.1
0.1