STGFW35HF60W STMicroelectronics, STGFW35HF60W Datasheet - Page 3

• Manufacturer Part Number: STGFW35HF60W
• Description: IGBT Transistors 35A 600V UltraF IGBT Improved Eoff Temp
• Manufacturer: STMicroelectronics

Specifications of STGFW35HF60W

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 88 W
• Package / Case: TO-3PF
• Continuous Collector Current Ic Max: 18 A
• Mounting Style: Through Hole

STGF35HF60W, STGW35HF60W, STGFW35HF60W
1
Electrical ratings
Table 2.
1.
2. V
Table 3.
Symbol
Symbol
R
R
I
I
V
P
CP
V
CL
V
thj-case
T
thj-amb
Pulse width limited by maximum junction temperature and turn-off within RBSOA
CES
I
I
TOT
T
ISO
CLAMP
GE
stg
C
C
j
(1)
(2)
= 80% (V
Collector-emitter voltage (V
Continuous collector current at T
°C
Continuous collector current at T
°C
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; T
Total dissipation at T
Storage temperature
Operating junction temperature
Thermal resistance junction-case
Thermal resistance junction-ambient
Absolute maximum ratings
Thermal data
CES
C
), V
= 25 °C)
GE
Parameter
= 15 V, R
Parameter
C
Doc ID 17490 Rev 3
= 25 °C
G
= 10 Ω, T
GE
= 0)
C
C
= 25
= 100
J
= 150 °C
TO-247
200
60
35
TO-247
0.63
50
- 55 to 150
TO-220FP
TO-220FP
Value
2500
± 20
600
150
19
12
80
40
Value
62.5
3.1
Electrical ratings
TO-3PF
TO-3PF
1.41
36
18
88
50
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
V
V
3/17
A