STGFW30NC60V STMicroelectronics, STGFW30NC60V Datasheet - Page 3

• Manufacturer Part Number: STGFW30NC60V
• Description: IGBT Transistors 40 A 600V Very Fast High Freq 50KHz IGBT
• Manufacturer: STMicroelectronics

Specifications of STGFW30NC60V

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 36 A
• Power Dissipation: 80 W
• Package / Case: TO-3-PF
• Mounting Style: Through Hole

STGFW30NC60V
1
Electrical ratings
Table 2.
1. Vclamp = 80%(V
2. Pulse width limited by max junction temperature allowed
Table 3.
Symbol
Symbol
R
R
I
V
I
P
CP
V
CL
V
thj-case
thj-amb
CES
T
I
I
TOT
ISO
GE
C
C
J
(1)
(2)
Collector-emitter voltage (V
Collector current (continuous) at 25 °C
Collector current (continuous) at 100 °C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Insulation withstand voltage (RMS) from all three leads to
external heat sink (t = 1 s; T
Total dissipation at T
Operating junction temperature
Thermal resistance
Absolute maximum ratings
Thermal resistance junction-case max
Thermal resistance junction-ambient max
CES
), T
j
=150 °C, R
Doc ID 023105 Rev 1
C
= 25 °C
G
Parameter
=10 Ω, V
GE
C
Parameter
= 25 °C)
= 0)
GE
=15 V
– 55 to 150
Value
2500
± 20
600
100
100
Electrical ratings
36
18
80
Value
1.56
50
°C/W
°C/W
Unit
Unit
°C
W
V
A
A
A
A
V
V
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