FGA20S125P Fairchild Semiconductor, FGA20S125P Datasheet - Page 3

• Manufacturer Part Number: FGA20S125P
• Description: IGBT Transistors 2.5A Output Current GateDrive Optocopler
• Manufacturer: Fairchild Semiconductor

Specifications of FGA20S125P

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1250 V
• Collector-emitter Saturation Voltage: 2.44 V
• Maximum Gate Emitter Voltage: 25 V
• Continuous Collector Current At 25 C: 40 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-3PN
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

© 2012 Fairchild Semiconductor Corporation
FGA20S125P Rev. C3
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
100
160
140
120
100
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0.0
0.0
25
T
Common Emitter
V
T
T
Common Emitter
V
C
C
C
GE
Collector-EmitterCase Temperature, T
GE
= 25
Characteritics
= 25
= 175
1.0
= 15V
= 15V
50
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
o
1.0
C
C
o
C
2.0
V
75
GE
3.0
2.0
= 17V
100
4.0
I
C
20V
= 10A
20A
40A
3.0
5.0
125
6.0
CE
CE
4.0
15V
12V
10V
9V
8V
[V]
[V]
150
C
7.0
[
o
C]
175
5.0
8.0
3
Figure 2. Typical Saturation Voltage
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. Vge
160
140
120
100
20
15
10
80
60
40
20
80
60
40
20
5
0
0
0
0.0
4
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
T
Common Emitter
V
T
T
C
CE
C
C
= 175
= 25
= 175
I
1.0
C
= 20V
= 10A
Collector-Emitter Voltage, V
o
C
o
o
Gate-Emitter Voltage, V
C
C
Gate-Emitter Voltage,V
2.0
8
Characteristics
3.0
20A
12
4.0
40A
5.0
Common Emitter
T
C
GE
GE
= 25
16
6.0
[V]
CE
[V]
V
o
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GE
C
[V]
= 20V
7.0
17V
15V
12V
10V
9V
8V
20
8.0