FGH30S130P Fairchild Semiconductor, FGH30S130P Datasheet

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FGH30S130P

Manufacturer Part Number
FGH30S130P
Description
IGBT Transistors 1300V 30A FS SA Trench IGBT
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGH30S130P

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
1300 V
Collector-emitter Saturation Voltage
1.9 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current At 25 C
60 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-3PN
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
FGH30S130P
Manufacturer:
FSC
Quantity:
1 000
Part Number:
FGH30S130P
Manufacturer:
FAIRCHILD
Quantity:
3 969
Company:
Part Number:
FGH30S130P
Quantity:
4 500
©2012 Fairchild Semiconductor Corporation
FGH30S130P Rev. C0
Absolute Maximum Ratings
Thermal Characteristics
Notes:
1: Limited by Tjmax
FGH30S130P
1300 V, 30 A Shorted-anode IGBT
Features
• High Speed Switching
• Low Saturation Voltage: V
• High Input Impedance
• RoHS Compliant
Applications
• Induction Heating, Microwave Oven
V
V
I
I
I
I
P
T
T
T
R
R
C
CM (1)
F
F
stg
J
L
CES
GES
D
JC
JA
Symbol
Symbol
(IGBT)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
CE(sat)
= 1.75 V @ I
Description
Parameter
E
COLLECTOR
(FLANGE)
T
C
C
= 25°C unless otherwise noted
C
G
= 30 A
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
1
= 25
= 100
= 25
= 100
= 25
= 100
General Description
Using advanced field stop trench and shorted-anode technol-
ogy, Fairchild
duction and switching performances for soft switching
applications. The device can operate in parallel configuration
with exceptional avalanche capability. This device is designed
for induction heating and microwave oven.
o
o
o
C
C
C
o
o
o
C
C
C
®
’s shorted-anode trench IGBTs offer superior con-
Typ.
--
--
G
-55 to +175
-55 to +175
Ratings
1300
±25
500
250
300
60
30
90
60
30
Max.
0.3
40
C
E
April 2013
www.fairchildsemi.com
Unit
Unit
o
o
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
A
C
C
C

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FGH30S130P Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient, Max JA Notes: 1: Limited by Tjmax ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 General Description Using advanced field stop trench and shorted-anode technol- ogy, Fairchild = duction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability ...

Page 2

... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 Package Reel Size TO-247 - T = 25°C unless otherwise noted C Test Conditions Min 1300 ...

Page 3

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 3.5 Common Emitter V = 15V GE 3.0 2.5 2.0 1.5 1 100 Collector-EmitterCase Temperature, T ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 Figure 2. Typical Output Characteristics 10V [V] CE Figure 4. Transfer Characteristics 4.0 5.0 6.0 [V] CE Figure 6. Saturation Voltage vs. V 60A 30A ...

Page 4

... Common Emitter 30A t C d(on Gate Resistance, R ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 Figure 8. Capacitance Characteristics GE 10000 Common Emitter 175 [V] GE Figure 10. SOA Characteristics 400V 600V 250 300 350 Figure 12. Turn-off Characteristics vs. ...

Page 5

... Gate Resistance, R Figure 17. Turn off Switching SOA Characteristics 100 10 Safe Operating Area 15V 175 100 Collector-Emitter Voltage, V ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 Figure 14.Turn-off Characteristics VS d(on) 60 [A] C Figure 16. Switching Loss VS. Collector Current }  [ ...

Page 6

... Figure 19. Transient Thermal Impedance of IGBT 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 1E-4 1E-3 0.01 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + 0 www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 TO-247A03 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2012 Fairchild Semiconductor Corporation FGH30S130P Rev. C0 ® tm ® PowerTrench SM PowerXS™ Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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