NGTG15N60S1EG ON Semiconductor, NGTG15N60S1EG Datasheet - Page 4

• Manufacturer Part Number: NGTG15N60S1EG
• Description: IGBT Transistors 15A 600V IGBT
• Manufacturer: ON Semiconductor

Specifications of NGTG15N60S1EG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.95 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 30 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 47 W
• Package / Case: TO-220
• Mounting Style: Through Hole

1000
1000
100
100
20
15
10
10
10
5
0
1
1
8
0
0
V
V
T
R
V
V
I
R
C
Figure 9. Switching Time vs. Temperature
CE
GE
J
G
10
CE
GE
G
= 150°C
= 15 A
t
t
20
= 22 W
d(on)
t
t
d(off)
= 22 W
f
r
= 400 V
= 15 V
= 400 V
= 15 V
12
Figure 11. Switching Time vs. I
T
20
Figure 7. Typical Gate Charge
J
, JUNCTION TEMPERATURE (°C)
I
40
C
, COLLECTOR CURRENT (A)
Q
30
G
16
, GATE CHARGE (nC)
60
40
50
80
20
V
60
100
CES
24
= 480 V
70
TYPICAL CHARACTERISTICS
120
t
t
d(on)
d(off)
80
t
t
C
f
r
28
140
http://onsemi.com
90
160
100
32
4
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.2
0.9
0.6
0.3
0
0
0
8
5
0
V
V
T
R
V
V
I
T
Figure 8. Switching Loss vs. Temperature
J
C
CE
GE
G
J
CE
GE
= 150°C
= 15 A
15
20
= 150°C
= 22 W
= 400 V
= 15 V
= 400 V
= 15 V
12
Figure 12. Switching Time vs. R
Figure 10. Switching Loss vs. I
T
J
, JUNCTION TEMPERATURE (°C)
I
40
C
25
, COLLECTOR CURRENT (A)
Eon
R
Eoff
G
16
, GATE RESISTOR (W)
35
60
80
20
45
100
55
24
V
V
I
R
C
Eoff
CE
GE
G
120
Eon
65
= 15 A
= 22 W
= 400 V
= 15 V
Eon
Eoff
C
G
28
140
75
160
32
85