IRGR4045DPBF International Rectifier, IRGR4045DPBF Datasheet - Page 5

• Manufacturer Part Number: IRGR4045DPBF
• Description: IGBT Transistors IR IGBT 600V 6A, COPAK-DPAK
• Manufacturer: International Rectifier

Specifications of IRGR4045DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 6 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 39 W
• Maximum Operating Temperature: + 175 C
• Package / Case: DPAK
• Continuous Collector Current Ic Max: 12 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

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T
T
J
J
= 175°C; L = 1mH; V
= 175°C; L = 1mH; V
400
350
300
250
200
150
100
220
200
180
160
140
120
100
80
60
50
30
25
20
15
10
5
0
Fig. 17 - Typical Diode I
0
0
2
Fig. 13 - Typ. Energy Loss vs. I
Fig. 15 - Typ. Energy Loss vs. R
2
4
25
E OFF
E OFF
T
4
CE
J
6
CE
= 175°C
= 400V, R
50
E ON
6
Rg ()
I C (A)
= 400V, I
I F (A)
E ON
8
R G = 100
R G = 47
8
75
R G = 22
R G = 10
G
10
RR
= 47; V
10
CE
vs. I
100
= 6.0A; V
C
12
12
F
GE
G
125
14
= 15V.
14
GE
= 15V
1000
1000
100
100
10
10
22
20
18
16
14
12
10
1
1
8
6
2
0
Fig. 14 - Typ. Switching Time vs. I
0
Fig. 18 - Typical Diode I
Fig. 16- Typ. Switching Time vs. R
T
T
t F
J
td ON
t F
td ON
J
td OFF
= 175°C; L=1mH; V
td OFF
t R
t R
= 175°C; L=1mH; V
4
25
25
T
R
I
J
CE
G
= 175°C; I
= 47; V
= 6.0A; V
6
50
IRGR4045DPbF
50
R G ()
R G (
I C (A)
8
GE
F
GE
75
75
= 6.0A
= 15V
10
= 15V
CE
RR
CE
= 400V
100
= 400V
vs. R
100
12
G
C
125
125
14
G
5