FGD3040G2_F085 Fairchild Semiconductor, FGD3040G2_F085 Datasheet - Page 2

• Manufacturer Part Number: FGD3040G2_F085
• Description: IGBT Transistors EcoSPARK2 300mJ 400V N-Chan Ignition IGBT
• Manufacturer: Fairchild Semiconductor

Specifications of FGD3040G2_F085

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 400 V
• Collector-emitter Saturation Voltage: 1.15 V
• Maximum Gate Emitter Voltage: 10 V
• Continuous Collector Current At 25 C: 23.2 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 125 C
• Package / Case: TO-252
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Factory Pack Quantity: 2500

@2012 Fairchild Semiconductor Corporation
FGD3040G2_F085 Rev.C1
Device Maximum Ratings
Package Marking and Ordering Information
Electrical Characteristics
Off State Characteristics
On State Characteristics
BV
BV
E
E
I
I
V
P
T
T
T
T
ESD
BV
BV
BV
BV
I
I
R
R
V
V
V
E
Symbol
Symbol
C25
C110
CER
ECS
J
STG
L
PKG
SCIS25
SCIS150
GEM
D
Device Marking
CE(SAT)
CE(SAT)
CE(SAT)
SCIS
1
2
CER
ECS
CER
CES
ECS
GES
FGD3040G2
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
Collector to Emitter Saturation Voltage I
Collector to Emitter Saturation Voltage I
Collector to Emitter Saturation Voltage I
Self Clamped Inductive Switching
Collector to Emitter Breakdown Voltage (I
Emitter to Collector Voltage - Reverse Battery Condition (I
Self Clamping Inductive Switching Energy (Note 1)
Self Clamping Inductive Switching Energy (Note 2)
Collector Current Continuous, at V
Collector Current Continuous, at V
Gate to Emitter Voltage Continuous
Power Dissipation Total, at T
Power Dissipation Derating, for T
Operating Junction Temperature Range
Storage Junction Temperature Range
Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
Reflow soldering according to JESD020C
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
FGD3040G2_F085
Parameter
Device
C
= 25°C
T
T
A
A
C
= 25°C unless otherwise noted
= 25°C unless otherwise noted
GE
GE
> 25
Parameter
Package
TO252
= 5.0V, T
= 5.0V, T
o
I
R
T
I
R
T
I
T
I
V
V
L = 3.0 mHy,R
V
C
CE
CE
CE
GES
CE
CE
CE
C
J
J
J
GE
CE
EC
GE
GE
= -40 to 150
= -40 to 150
= 25°C
= 1mA)
= 6A, V
= 15A, V
= 10A, V
= 2mA, V
= 10mA, V
= -20mA, V
= 250V, R
= 24V,
= 5V, (Note 1)
= 1KΩ,
= 0,
= ±2mA
C
C
= 25°C
= 110°C
2
GE
GE
GE
GE
Test Conditions
= 4V,
G
GE
= 4.5V,
GE
o
o
GE
= 4.5V,
Reel Size
C
C
= 1KΩ,
= 0,
330mm
= 0V,
C
= 1KΩ
= 0V,
= 10mA)
T
T
T
T
T
T
T
T
J
J
J
J
J
J
J
J
= 25
= 25
= 150
= 150
= 25
= 150
= 150
= 25°C
o
o
o
C
C
o
o
Tape Width
o
o
C
C
C
C
C
16mm
10K
Min
370
390
±12
28
-
-
-
-
-
-
-
-
-
-55 to +175
-55 to +175
Ratings
1.15
1.35
1.68
25.6
400
420
±14
120
Typ
400
300
170
±10
150
300
260
28
41
1
4
2
-
-
-
-
-
-
-
www.fairchildsemi.com
2500 units
Quantity
Max Units
30K
1.25
1.50
1.85
430
450
300
25
40
1
1
-
-
-
Units
W/
mA
mA
μA
mJ
mJ
mJ
o
o
kV
kV
Ω
Ω
V
V
V
V
W
V
V
V
V
V
A
A
V
C
C
o
o
o
C
C
C