FGD3440G2_F085 Fairchild Semiconductor, FGD3440G2_F085 Datasheet
FGD3440G2_F085
Specifications of FGD3440G2_F085
Related parts for FGD3440G2_F085
FGD3440G2_F085 Summary of contents
Page 1
... N-Channel Ignition IGBT Features o SCIS Energy = 335mJ Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package GATE EMITTER COLLECTOR JEDEC TO-252 D-Pak @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B Applications C Automotive lgnition Coil Driver Circuits Coil On Plug Applications 1 December 2011 www.fairchildsemi.com ...
Page 2
... On State Characteristics V Collector to Emitter Saturation Voltage I CE(SAT) V Collector to Emitter Saturation Voltage I CE(SAT) V Collector to Emitter Saturation Voltage I CE(SAT) E Self Clamped Inductive Switching SCIS @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev 25°C unless otherwise noted A Parameter = 1mA 10mA 4.0V 25° 4.0V 110°C ...
Page 3
... Notes: 1: Self Clamping Inductive Switching Energy =25 C; L=3mHy, I =15A,V J SCIS 2: Self Clamping Inductive Switching Energy ( =150 C; L=3mHy, I =11.4A,V SCIS J @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev 25°C unless otherwise noted A Test Conditions I = 10A 12V 1mA ...
Page 4
... Collector to Emitter On-State Voltage vs. Junction Temperature COLLECTOR TO EMITTER VOLTAGE (V) CE Figure 5. Collector to Emitter On-State Voltage vs. Collector Current @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev 5V 100V 1000 0 ( μ Figure 2. 1. 1.45 = 4.0V 1.40 1.35 1.30 1.25 1.20 1.15 1.10 ...
Page 5
... V = 24V ECS 1000 100 300V CES 1 V CES 0.1 -50 - JUNCTION TEMPERATURE J Figure 11. Leakage Current vs. Junction Temperature @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B (Continued) 30 PULSE DURATION = 80 DUTY CYCLE = 0.5% MAX 175 Figure 8. 2 4.0V GE 1.8 1.6 1.4 1.2 1 ...
Page 6
... Figure 15. 2 DUTY CYCLE - DESCENDING ORDER 0.50 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0. Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B (Continued 1MHz 100 ...
Page 7
... G G PULSE DUT GEN E Figure 17. Inductive Switching Test Circuit VARY t TO OBTAIN P REQUIRED PEAK SCIS Figure 19. Energy Test Circuit @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev Figure 18 DUT - SCIS 0.01 Figure 20. Energy Waveforms ...
Page 8
... Mechanical Dimensions 6.60 5.34 (0.50) (4.34) MAX0.96 2.30TYP [2.30±0.20] @2011 Fairchild Semiconductor Corporation FGD3440G2_F085 Rev. B D-PAK ±0.20 ±0.30 (0.50) 0.76 ±0.10 2.30TYP [2.30±0.20] 8 2.30 ±0.10 0.50 ±0.10 0.50 ±0.10 1.02 ±0.20 2.30 ±0.20 6.60 ±0.20 (5.34) (5.04) (1.50) (2XR0.25) 0.76 ±0.10 Dimensions in Millimeters www.fairchildsemi.com ...
Page 9
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. ® 2Cool™ FlashWriter AccuPower™ FPS™ Auto-SPM™ F-PFS™ ® AX-CAP™* FRFET ® ...