IXXN110N65C4H1 Ixys, IXXN110N65C4H1 Datasheet - Page 2

• Manufacturer Part Number: IXXN110N65C4H1
• Description: IGBT Modules 650V/234A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXN110N65C4H1

• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Single Dual Emitter
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.98 V
• Continuous Collector Current At 25 C: 210 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Maximum Operating Temperature: + 175 C
• Package / Case: SOT-227B-4
• Maximum Gate Emitter Voltage: 20 V
• Minimum Operating Temperature: - 55 C
• Mounting Style: SMD/SMT

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Sonic Diode (FRD)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g(on)
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
-di
F
I
C
C
C
F
C
CE
= 100A, V
CE
CE
= 110A, V
= 100A, V
= 55A, V
= 55A, V
= 60A, V
F
PRELIMINARY TECHNICAL INFORMATION
/dt = 1500A/μs, V
= 25V, V
= 400V, R
= 400V, R
GE
GE
CE
GE
GE
GE
GE
= 15V
= 15V
= 10V, Note 1
= 0V, Note 1
G
G
= 0V,
= 15V, V
= 0V, f = 1MHz
= 2
= 2
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
R
= 300V
CE
4,931,844
5,017,508
5,034,796
= 0.5
•
T
T
J
V
J
5,049,961
5,063,307
5,187,117
= 150°C
= 150°C
CES
Min.
Min.
24
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
3690
2.30
0.60
2.90
0.77
0.05
Typ.
Typ.
440
140
180
143
130
100
1.7
1.8
95
40
32
76
35
46
30
30
32
43
CE
(clamp), T
Max.
Max.
0.42 °C/W
0.20 °C/W
1.05 mJ
2.0
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
SOT-227B miniBLOC (IXXN)
IXXN110N65C4H1
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2