BZT52B6V8 Taiwan Semiconductor, BZT52B6V8 Datasheet - Page 3

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BZT52B6V8

Manufacturer Part Number
BZT52B6V8
Description
Zener Diodes 6.8 Volt 410mW 2%
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of BZT52B6V8

Product Category
Zener Diodes
Rohs
yes
Zener Voltage
6.8 V
Voltage Tolerance
2 %
Power Dissipation
500 mW
Maximum Reverse Leakage Current
1.8 uA
Maximum Zener Impedance
15 Ohms
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOD-123F
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
RH

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BZT52B6V8LP-7
Quantity:
1 000
Part Number:
BZT52B6V8RHG
Manufacturer:
SANYO
Quantity:
3 000
250
200
150
100
50
30
20
10
0
0
0
0
FIG.3- ZENER BREAKDOWN CHARACTERISTICS
FIG.1- POWER DERATING CURVE
T = 25 C
Test Current I
j
T , AMBIENT TEMPERATURE, ( C)
5mA
RATINGS AND CHARACTERISTIC CURVES (BZT52C2V4S THRU BZT52C75S)
A
O
V , ZENER VOLTAGE (V)
10
Z
Z
C10
C12
C15
C18
100
20
C22
C27
See Note 1
30
Test Current I
C33
2mA
O
C36
Z
200
40
C39
1000
100
50
40
30
20
10
10
0
0
1
FIG.4- JUNCTION CAPACITANCE VS NOMINAL
FIG.2- ZENER BREAKDOWN CHARACTERISTICS
T = 25 C
Test Current I
V , NOMINAL ZENER VOLTAGE (V)
j
Z
5.0mA
1
V = 2V
R
ZENER VOLTAGE
O
2
V , ZENER VOLTAGE (V)
Z
Z
V = 1V
R
3
C2V7
V = 2V
R
C3V3
4
10
V = 1V
C3V9
R
C4V7
5
C5V6
6
Version:B08
C6V8
T = 25 C
j
7
O
8
C8V2
100
9 10

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