STP80N70F6 STMicroelectronics, STP80N70F6 Datasheet - Page 3

• Manufacturer Part Number: STP80N70F6
• Description: MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI
• Manufacturer: STMicroelectronics

Specifications of STP80N70F6

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 68 V
• Continuous Drain Current: 96 A
• Resistance Drain-source Rds (on): 0.008 Ohms
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: TO-220
• Fall Time: 23 ns
• Gate Charge Qg: 99 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 110 W
• Rise Time: 29 ns
• Typical Turn-off Delay Time: 102 ns

STP80N70F6
1
Electrical ratings
Table 2.
1. This value is rated according to R
Table 3.
Symbol
Symbol
P
I
R
R
DM
TOT
I
I
V
V
T
D
D
thj-c
thj-a
T
GS
DS
stg
(1)
(1)
j
(1)
(1)
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Storage temperature
Operating junction temperature
Absolute maximum ratings
Thermal data
Parameter
Parameter
C
Doc ID 023433 Rev 1
thj-c
= 25 °C
C
C
= 25 °C
= 100 °C
- 55 to 175
Value
Value
± 20
1.36
62.5
384
110
68
96
60
Electrical ratings
°C/W
°C/W
Unit
Unit
°C
W
V
V
A
A
A
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