FDB3632_F085 Fairchild Semiconductor, FDB3632_F085 Datasheet - Page 13
FDB3632_F085
Manufacturer Part Number
FDB3632_F085
Description
MOSFET 100V N-Channel PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet
1.FDB3632_F085.pdf
(15 pages)
Specifications of FDB3632_F085
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
80 A
Resistance Drain-source Rds (on)
7.5 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263AB-3
Fall Time
46 ns
Gate Charge Qg
84 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
310 W
Rise Time
39 ns
Typical Turn-off Delay Time
96 ns
Mechanical Dimensions
TO-262A03
Dimensions in Millimeters
©2004 Fairchild Semiconductor Corporation
13
www.fairchildsemi.com
FDB3632 / FDP3632 / FDI3632 / FDH3632 Rev. C4