BZT55B68 Taiwan Semiconductor, BZT55B68 Datasheet - Page 2

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BZT55B68

Manufacturer Part Number
BZT55B68
Description
Zener Diodes 68 Volt 500mW 2%
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of BZT55B68

Product Category
Zener Diodes
Rohs
yes
Zener Voltage
68 V
Voltage Tolerance
2 %
Power Dissipation
500 mW
Maximum Reverse Leakage Current
0.1 uA
Maximum Zener Impedance
160 Ohms
Maximum Operating Temperature
+ 200 C
Mounting Style
SMD/SMT
Package / Case
MiniMelf
Configuration
Single
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
2500
Part # Aliases
L1
Figure 2. Typical Change of Working Voltage under Operating
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 3. Typical Change of Working Voltage vs. Junction
1000
600
500
400
300
200
100
100
1.3
1.2
1.1
1.0
0.9
0.8
10
1
0
0
- 60
RATINGS AND CHARACTERISTIC CURVES(BZT55B SERIES)
0
T
j
Conditions at T
T
= 25 °C
amb
V
40
Ztn
T
0
5
j
- Ambient Temperature (°C)
= V
- Junction Temperature (°C)
Temperature
Zt
/V
V
80
Z
Z
10
60
TK
- Z-Voltage (V)
(25 °C)
VZ
I
Z
amb
= 10 x 10
= 5 mA
120
120
15
=25°C
-4
/K
180
- 2 x 10
- 4 x 10
160
20
8 x 10
6 x 10
4 x 10
2 x 10
0
-4
-4
-4
-4
-4
-4
/K
/K
240
200
/K
/K
/K
/K
25
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
0.001
0.01
100
Figure 5. Diode Capacitance vs. Z-Voltage
0.1
200
150
100
10
- 5
15
10
50
5
0
0
1
0
0
0
10
0.2
5
V
T
F
V
j
V
- Forward Voltage (V)
= 25 °C
Z
Z
- Z-Voltage (V)
20
10
0.4
- Z-Voltage (V)
I
Z
= 5 mA
0.6
15
30
T
V
j
R
= 25 °C
Version: C08
= 2 V
40
20
0.8
1.0
50
25

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