SBYV28-200-E3/1 Vishay Semiconductors, SBYV28-200-E3/1 Datasheet - Page 3

• Manufacturer Part Number: SBYV28-200-E3/1
• Description: Rectifiers 200 Volt 3.5A 20ns 90 Amp IFSM
• Manufacturer: Vishay Semiconductors

Specifications of SBYV28-200-E3/1

• Product Category: Rectifiers
• Rohs: yes
• Product: Ultra Fast Recovery Rectifiers
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.1 V
• Recovery Time: 20 ns
• Forward Continuous Current: 3.5 A
• Max Surge Current: 90 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Package / Case: DO-201AD
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 1500

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88737
Revision: 22-Oct-09
1000
0.01
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.4
Fig. 4 - Typical Reverse Leakage Characteristics
0
Percent of Rated Peak Reverse Voltage (%)
0.6
Instantaneous Forward Voltage (V)
20
T
J
0.8
= 100 °C
Pulse Width = 300 μs
1 % Duty Cycle
40
1.0
T
[e-mail], [e-mail],
J
= 25 °C
For technical questions within your region, please contact one of the following:
T
T
1.2
J
J
60
= 100 °C
= 25 °C
1.4
80
1.6
100
1.8
0.210 (5.3)
0.190 (4.8)
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
SBYV28-50 thru SBYV28-200
100
MIN.
MIN.
60
50
40
30
20
10
10
0
1
0.1
0
[e-mail]
Vishay General Semiconductor
Fig. 5 - Reverse Switching Characteristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 4.0 A
= 30 V
25
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
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t
Q
rr
p-p
rr
100
175
3