SBYV27-150-E3/4 Vishay Semiconductors, SBYV27-150-E3/4 Datasheet - Page 3
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SBYV27-150-E3/4
Manufacturer Part Number
SBYV27-150-E3/4
Description
Rectifiers 150 Volt 2.0A 15ns 50 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.SBYV27-150-E351.pdf
(4 pages)
Specifications of SBYV27-150-E3/4
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
150 V
Forward Voltage Drop
1.07 V at 3 A
Recovery Time
15 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Package / Case
DO-15
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
4000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88736
Revision: 22-Oct-09
10 000
1000
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
100
0.1
0.1
10
10
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0
T
J
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
0.4
Instantaneous Forward Voltage (V)
20
T
J
= 150 °C
0.6
T
T
40
J
J
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
= 125 °C
= 150 °C
T
For technical questions within your region, please contact one of the following:
J
0.8
T
T
= 100 °C
J
J
= 25 °C
= 25 °C
60
1.0
T
J
= 100 °C
80
1.2
100
1.4
0.300 (7.6)
0.230 (5.8)
1.0 (25.4)
1.0 (25.4)
MIN.
MIN.
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
0.140 (3.6)
0.104 (2.6)
DIA.
DIA.
SBYV27-50 thru SBYV27-200
100
10
60
50
40
30
20
10
0
1
0.1
0
DiodesEurope@vishay.com
Vishay General Semiconductor
Fig. 5 - Reverse Switching Charateristics
I
V
F
R
Fig. 6 - Typical Junction Capacitance
= 2.0 A
= 30 V
25
Junction Temperature (°C)
50
Reverse Voltage (V)
1
75
100
10
125
V
dI/dt = 150 A/μs
dI/dt = 100 A/μs
dI/dt = 100 A/μs
dI/dt = 150 A/μs
sig
dI/dt = 20 A/μs
dI/dt = 50 A/μs
dI/dt = 50 A/μs
dI/dt = 20 A/μs
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
150
www.vishay.com
t
Q
rr
p-p
rr
100
175
3