VS-GB100TS60NPBF Vishay, VS-GB100TS60NPBF Datasheet - Page 5

• Manufacturer Part Number: VS-GB100TS60NPBF
• Description: IGBT Modules 108 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB100TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 108 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
T
J
100
100
90
80
70
60
50
90
80
70
60
50
40
30
20
10
80
60
40
20
= 125 °C, V
0
0
600
0
0
Fig. 13 - Typical Diode I
Fig. 12 - Typical Diode I
Fig. 11 - Typical Diode I
www.vishay.com
800
20
10
T
J
CC
= 125 °C, I
1000
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 360 V, I
40
dI
T
F
J
20
/ dt (A/μs)
= 125 °C
R
1200
4.7 ohm
I
G
60
F
(A)
(Ω)
F
30
F
= 100 A
1400
= 150 A, V
27 ohm
80
rr
47 ohm
rr
vs. dI
rr
vs. R
40
1600
vs. I
100
F
F
/dt,
GE
g
,
,
1800
50
120
= 15 V
5
Fig. 15 - Typical Switching Losses vs. Junction Temperature,
T
J
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
= 125 °C, R
L = 200 μH, R
0.1
2.5
1.5
0.5
10
9
8
7
6
5
4
3
2
1
1
www.vishay.com/doc?91000
2
1
0
20
0
0
Fig. 16 - Typical Switching Losses vs.
T
J
g1
= 125 °C, L = 200 μH, R
T
Collector to Emitter Current,
J
= 4.7 V, R
10
V
25
- Junction Temperature (°C)
CC
40
g
= 10 , V
Vishay Semiconductors
= 360 V, V
20
50
Ic = 100A
R
g2
I
GB100TS60NPbF
C
G
[e-mail]
60
(A)
= 0 , V
(Ω)
CC
Ic = 50A
30
75
GE
= 360 V, V
= 15 V
Document Number: 94501
CC
Ic = 25A
80
g
100
40
= 10 ,
= 360 V, V
GE
100
125
50
= 15 V
GE
= 15 V