VS-GB150TS60NPBF Vishay, VS-GB150TS60NPBF Datasheet - Page 5

• Manufacturer Part Number: VS-GB150TS60NPBF
• Description: IGBT Modules 138 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB150TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 138 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
T
J
100
100
80
60
40
20
= 125 °C, V
90
80
70
60
50
40
30
20
90
80
70
60
50
40
200
0
Fig. 13 - Typical Diode I
Fig. 12 - Typical Diode I
www.vishay.com
Fig. 11 - Typical Diode I
60
400
10
T
J
CC
= 125 °C, I
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
80
= 360 V, I
600
T
dI
J
20
F
= 125 °C
R
/ dt (A/μs)
I
100
F
G
800
(A)
(Ω)
F
10 ohm
30
F
= 150 A
= 150 A, V
120
1000
rr
27 ohm
47 ohm
rr
vs. dI
rr
40
vs. R
vs. I
140
1200
F
F
GE
/dt
g
160
1400
50
= 15 V
5
Fig. 16 - Typical Switching Losses vs. Collector to Emitter Current;
T
Fig. 15 - Typical Switching Losses vs. Junction Temperature;
T
J
J
Fig. 14 - Typical Switching Losses vs. Gate Resistance,
= 125 °C, L = 200 μH, R
= 125 °C, R
L = 200 μH, R
17
16
15
14
13
12
11
10
10
www.vishay.com/doc?91000
9
8
7
6
1
8
7
6
5
4
3
2
1
0
0
0
0
g1
T
= 10 , R
J
10
25
- Junction Temperature (°C)
g
40
= 10 , V
Vishay Semiconductors
Ic = 150A
20
50
g
g2
GB150TS60NPbF
R
= 10 , V
I
[e-mail]
C
G
= 0 , V
80
(A)
(Ω)
CC
Ic = 100A
30
75
= 360 V, V
Ic = 75A
Document Number: 94502
CC
CC
120
100
= 360 V, V
40
= 360 V, V
GE
160
125
= 15 V
50
GE
GE
= 15 V
= 15 V