IXXR110N65B4H1 Ixys
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IXXR110N65B4H1
Manufacturer Part Number
IXXR110N65B4H1
Description
IGBT Transistors 650V/150A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Specifications of IXXR110N65B4H1
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
150 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Package / Case
ISOPLUS 247-3
Continuous Collector Current Ic Max
70 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole