IXXX110N65B4H1 Ixys, IXXX110N65B4H1 Datasheet

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IXXX110N65B4H1

Manufacturer Part Number
IXXX110N65B4H1
Description
IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXX110N65B4H1

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.75 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
240 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
880 W
Maximum Operating Temperature
+ 175 C
Package / Case
PLUS 247-3
Continuous Collector Current Ic Max
110 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXX110N65B4H1
Manufacturer:
IXYS
Quantity:
3 000
XPT
w/ Sonic Diode
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2013 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
F110
CM
CES
GES
sc
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V GenX4
Clamped Inductive Load
T
T
Continuous
Transient
T
Terminal Current Limit
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
GE
GE
CE
CE
G
= 25°C ( Chip Capability )
= 25°C to 175°C
= 25°C to 175°C, R
= 110°C
= 110°C
= 25°C, 1ms
= 15V, V
= 82Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 110A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
= ±20V
GE
= 360V, T
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= 0V
= V
(PLUS247)
GE
GE
J
= 1MΩ
TM
G
= 150°C
Preliminary Technical Information
= 2Ω
T
T
J
J
= 150°C
= 150°C
IXXK110N65B4H1
IXXX110N65B4H1
Min.
20..120 /4.5..27
650
4.0
Characteristic Values
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
CM
1.13/10
2.15
1.75
Typ.
= 220
V
±20
±30
110
630
880
175
300
260
650
650
240
160
CES
10
78
10
6
Max.
±100
2.10
Nm/lb.in.
6.5
25
3 mA
N/lb.
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-264 (IXXK)
PLUS247 (IXXX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
Anti-Parallel Sonic Diode
High Current Handling Capability
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
High Frequency Power Inverters
CES
CE(sat)
G
G
C
E
G
= 650V
= 110A
= 85ns
C
≤ ≤ ≤ ≤ ≤ 2.1V
E
E
Tab = Collector
DS100502A(02/13)
Tab
= Emitter
Tab

Related parts for IXXX110N65B4H1

IXXX110N65B4H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 110A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXK110N65B4H1 TM IXXX110N65B4H1 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 240 160 110 78 630 = 2Ω 220 G CM ≤ CES = 150° ...

Page 2

... Typ. 1 150°C 1 150° 300V 100 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXK110N65B4H1 IXXX110N65B4H1 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 1. 0.17 °C/W ° ...

Page 3

... GE 14V 13V 12V 11V 10V 2.5 3 3.5 4 4.5 100 T = 25º 220A C 110A 55A IXXK110N65B4H1 IXXX110N65B4H1 Fig. 2. Extended Output Characteristics @ T 13V V = 15V GE 14V 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 2 ...

Page 4

... C ies 160 120 C oes res 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXXK110N65B4H1 IXXX110N65B4H1 Fig. 8. Gate Charge V = 325V 110A 10mA 100 120 140 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...

Page 5

... CE 120 150 100 T = 150ºC 140 J 80 130 60 120 40 110 100 100 105 110 IXXK110N65B4H1 IXXX110N65B4H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω ,    15V 400V 150º 25ºC ...

Page 6

... I = 55A 100 125 150 IXXK110N65B4H1 IXXX110N65B4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω  15V 400V 25º Amperes ...

Page 7

... 200A F 0.1 100A 0.01 50A 0.001 1200 1400 1600 IXXK110N65B4H1 IXXX110N65B4H1 Fig. 22. Typ. Reverse Recovery Charge 150º 300V 1000 1200 1400 1600 - [A/µs] F Fig. 24. Typ. Recovery Time t 1000 1200 1400 ...

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