IXXK110N65B4H1 Ixys, IXXK110N65B4H1 Datasheet - Page 2

• Manufacturer Part Number: IXXK110N65B4H1
• Description: IGBT Transistors 650V/240A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXK110N65B4H1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.75 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 240 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 880 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 110 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Symbol Test Conditions
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
Reverse Sonic Diode (FRD)
Symbol Test Conditions
(T
V
I
t
R
Notes:
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072
RM
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
rr
fs
F
ie
oes
res
on
of
on
off
thJC
thCS
thJC
g(on)
ge
gc
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
s
f
= 25°C Unless Otherwise Specified)
= 25°C Unless Otherwise Specified)
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
I
V
I
Inductive load, T
I
V
Note 2
Inductive load, T
I
V
Note 2
I
-di
F
I
C
C
C
F
C
CE
= 100A, V
CE
CE
= 110A, V
= 100A, V
= 55A, V
= 55A, V
= 60A, V
F
PRELIMINARY TECHNICAL INFORMATION
/dt = 1500A/μs, V
= 25V, V
= 400V, R
= 400V, R
GE
GE
CE
GE
GE
GE
GE
= 15V
= 15V
= 10V, Note 1
= 0V, Note 1
G
G
= 0V,
= 15V, V
= 0V, f = 1MHz
= 2
= 2
4,835,592
4,881,106
J
J
Ω
Ω
= 25°C
= 150°C
R
= 300V
CE
4,931,844
5,017,508
5,034,796
= 0.5
•
T
T
J
V
J
5,049,961
5,063,307
5,187,117
= 150°C
= 150°C
CES
Min.
Min.
24
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
3650
2.20
1.05
3.15
1.40
0.15
Typ.
Typ.
440
143
183
156
160
105
100
1.7
1.8
CE
95
40
32
83
38
46
85
34
46
(Clamp), T
Max.
Max.
0.38 °C/W
0.17 °C/W
1.70 mJ
2.0
6,404,065 B1
6,534,343
6,583,505
J
°C/W
or R
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
V
V
S
A
G
.
6,683,344
6,710,405 B2 6,759,692
6,710,463
PLUS247
TO-264 Outline
Terminals: 1 - Gate
Terminals:
6,727,585
6,771,478 B2 7,071,537
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXXK110N65B4H1
IXXX110N65B4H1
2,4 = Collector
TM
3 = Emitter
20.80
15.75
19.81
1 = Gate
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
2 - Collector
3 - Emitter
Outline
Millimeter
5.45 BSC
7,005,734 B2
7,063,975 B2
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
Inches
7,157,338B2
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190