IXXH60N65B4 Ixys, IXXH60N65B4 Datasheet - Page 6

• Manufacturer Part Number: IXXH60N65B4
• Description: IGBT Transistors 650V/116A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH60N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 116 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
160
120
120
105
80
40
90
75
60
45
30
15
0
0
25
5
T
V
Fig. 20. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
t
r i
J
CE
10
= 150ºC, V
= 400V
15
50
GE
t
I
d(on)
= 15V
20
C
Junction Temperature
= 60A
T
J
- - - -
Gate Resistance
- Degrees Centigrade
25
75
I
R
C
I
C
G
= 60A
= 30A
- Ohms
30
35
100
R
V
t
r i
G
CE
= 5
I
= 400V
C
Ω
40
= 30A
, V
GE
45
125
= 15V
t
d(on)
50
- - - -
55
150
120
100
80
60
40
20
42
40
38
36
34
32
30
28
26
160
140
120
100
80
60
40
20
0
30
t
R
V
Fig. 19. Inductive Turn-on Switching Times vs.
r i
CE
G
= 5
= 400V
Ω
40
, V
GE
= 15V
t
d(on)
50
T
Collector Current
J
- - - -
T
= 25ºC
J
= 150ºC
I
C
60
- Amperes
IXXH60N65B4
70
IXYS REF: IXX_60N65B4H1(E6) 9-14-12
80
90
60
55
50
45
40
35
30
25
20