IXXH60N65B4H1 Ixys, IXXH60N65B4H1 Datasheet

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IXXH60N65B4H1

Manufacturer Part Number
IXXH60N65B4H1
Description
IGBT Transistors 650V/106A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXH60N65B4H1

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
116 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
380 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247AD-3
Continuous Collector Current Ic Max
60 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
XPT
GenX4
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
C110
F110
CM
CES
GES
sc
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V IGBT
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
C
GE
GE
CE
CE
G
w/ Sonic Diode
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 110°C
= 110°C
= 25°C, 1ms
= 15V, V
= 82Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 60A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
GE
= ±20V
= 360V, T
= 150°C, R
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
J
= 1MΩ
G
= 150°C
Preliminary Technical Information
= 5Ω
T
T
J
J
= 150°C
= 150°C
IXXH60N65B4H1
Min.
650
Characteristic Values
4.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
I
CE
CM
1.13/10
Typ.
= 120
2.2
1.7
±20
±30
230
V
116
380
175
300
260
650
650
10
60
48
CES
6
±100
Max.
Nm/lb.in.
2.0
6.5
25
3 mA
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 5-30kHz Switching
Square RBSOA
Anti-Parallel Sonic Diode
Short Circuit Capability
International Standard Package
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
= 650V
= 60A
= 72ns
≤ ≤ ≤ ≤ ≤ 2.0V
C
Tab = Collector
Tab
= Collector
DS100494A(02/13)

Related parts for IXXH60N65B4H1

IXXH60N65B4H1 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 60A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXH60N65B4H1 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 116 60 48 230 = 5Ω 120 G CM ≤ CES = 150° ...

Page 2

... Typ 150°C 1 150° 150°C 150 J (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH60N65B4H1 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter ns Min 4.7 A 2.2 1.75 ...

Page 3

... T = 25º 120A IXXH60N65B4H1 Fig. 2. Extended Output Characteristics @ 15V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 120A 60A 30A C -50 - ...

Page 4

... C ies 100 80 C oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXXH60N65B4H1 Fig. 8. Gate Charge V = 325V 60A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150º ...

Page 5

... 15V 130 400V CE 170 110 150 25ºC J 130 70 110 IXXH60N65B4H1 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 150º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. ...

Page 6

... 15V 400V 100 125 150 IXXH60N65B4H1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on Ω 15V 400V 25º 150º Amperes ...

Page 7

... 100A F 0.1 50A 25A 0.01 1200 1400 1600 0.0001 IXXH60N65B4H1 Fig. 22. Typ. Reverse Recovery Charge 150º 300V 100A F 6 50A 4 25A 2 0 400 600 800 1000 - [A/µs] F Fig. 24. Typ. Recovery Time t ...

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