NGTB15N60EG ON Semiconductor, NGTB15N60EG Datasheet - Page 2

no-image

NGTB15N60EG

Manufacturer Part Number
NGTB15N60EG
Description
IGBT Transistors 15A 600V IGBT
Manufacturer
ON Semiconductor
Datasheet

Specifications of NGTB15N60EG

Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
47 W
Package / Case
TO-220
Mounting Style
Through Hole

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NGTB15N60EG
Manufacturer:
ON Semiconductor
Quantity:
40
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTIC
DYNAMIC CHARACTERISTIC
SWITCHING CHARACTERISTIC , INDUCTIVE LOAD
DIODE CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
Collector−emitter saturation voltage
Gate−emitter threshold voltage
Collector−emitter cut−off current, gate−emitter
short−circuited
Gate leakage current, collector−emitter
short−circuited
Forward Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge total
Gate to emitter charge
Gate to collector charge
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Turn−on delay time
Rise time
Turn−off delay time
Fall time
Turn−on switching loss
Turn−off switching loss
Total switching loss
Forward voltage
THERMAL CHARACTERISTICS
Thermal resistance junction to case, for IGBT
Thermal resistance junction to case, for Diode
Thermal resistance junction to ambient
Parameter
Rating
(T
J
= 25°C unless otherwise specified)
V
V
V
V
GE
V
CE
GE
CE
GE
= 0 V, V
= 480 V, I
= 15 V , I
V
V
= 20 V, V
http://onsemi.com
V
V
= 0 V, I
V
V
V
V
GE
GE
CC
V
CC
GE
GE
GE
CE
GE
Test Conditions
V
V
= V
= 0 V, V
GE
= 400 V, I
GE
= 0 V, I
= 400 V, I
= 15 V , I
= 20 V, V
= 20 V, I
T
CE
= 0 V, I
R
R
T
F
J
CE
C
J
= 0 V / 15 V
= 0 V / 15 V
C
g
g
GE
= 150°C
= 15 A, T
= 600 V, T
= 25°C
= 22 W
= 22 W
= 15 A, T
= 15 A, V
2
, I
C
= 0 V, f = 1 MHz
CE
C
F
C
= 500 mA
C
CE
C
= 250 mA
C
= 15 A
= 600 V
= 15 A
= 15 A
= 15 A
= 15 A
= 0 V
J
J
GE
= 150°C
J
= 150°C
= 150°C
= 15 V
Symbol
R
R
R
qJC
qJC
qJA
V
Symbol
V
V
(BR)CES
t
t
t
t
I
C
I
C
GE(th)
C
Q
CEsat
Q
d(on)
d(off)
E
E
d(on)
d(off)
E
E
CES
GES
Q
E
E
g
V
oes
t
t
t
t
res
ies
on
off
on
off
fs
ge
gc
r
f
ts
r
f
ts
F
g
1.45
Min
600
1.8
4.5
Value
0.900
0.300
1.200
0.510
1.610
2600
1.06
3.76
10.1
1.10
Typ
130
120
133
223
60
1.7
2.1
5.5
1.6
1.6
10
64
42
80
24
33
78
30
76
33
Max
1.95
1.85
200
100
2.4
6.5
°C/W
°C/W
°C/W
Unit
Unit
nC
mJ
mJ
mA
nA
pF
ns
ns
V
V
V
S
V

Related parts for NGTB15N60EG