BYV42EB-200 /T3 NXP Semiconductors, BYV42EB-200 /T3 Datasheet - Page 2

• Manufacturer Part Number: BYV42EB-200 /T3
• Description: Rectifiers TAPE-7 REC-EPI
• Manufacturer: NXP Semiconductors

Specifications of BYV42EB-200 /T3

• Product Category: Rectifiers
• Rohs: yes
• Product: Ultra Fast Recovery Rectifiers
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.2 V
• Recovery Time: 28 ns
• Forward Continuous Current: 30 A
• Max Surge Current: 160 A
• Reverse Current Ir: 100 uA
• Mounting Style: SMD/SMT
• Package / Case: D2-PAK
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 800
• Part # Aliases: BYV42EB-200,118

NXP Semiconductors
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV42E series is supplied in the SOT78 conventional leaded package.
The BYV42EB series is supplied in the SOT404 surface mounting package.
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1. It is not possible to make connection to pin 2 of the SOT404 package
2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting
tab.
July 1998
Rectifier diodes
ultrafast, rugged
SYMBOL PARAMETER
V
V
V
I
I
I
I
I
T
T
O(AV)
FRM
FSM
RRM
RSM
stg
j
RRM
RWM
R
PIN
tab
1
2
3
anode 1 (a)
cathode (k)
anode 2 (a)
cathode (k)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave
(both diodes conducting)
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
current per diode
Repetitive peak reverse current t
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
DESCRIPTION
1
SYMBOL
SOT78 (TO220AB)
a1
CONDITIONS
T
δ = 0.5; T
T
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
t
1
p
p
mb
mb
RWM(max)
= 2 µs; δ = 0.001
= 100 µs
≤ 144˚C
≤ 108 ˚C
BYV42E / BYV42EB
tab
mb
k
1
2
1 2 3
≤ 108 ˚C
a2
3
BYV42E, BYV42EB series
MIN.
-40
QUICK REFERENCE DATA
-
-
-
-
-
-
-
-
-
-
SOT404
-150
150
150
150
V
R
= 150 V/ 200 V
I
I
V
O(AV)
RRM
t
MAX.
Product specification
F
rr
160
150
150
150
0.2
0.2
30
30
≤ 0.85 V
≤ 28 ns
1
= 0.2 A
= 30 A
tab
2
-200
200
200
200
3
Rev 1.200
UNIT
˚C
˚C
V
V
V
A
A
A
A
A
A