IXXK200N65B4 Ixys, IXXK200N65B4 Datasheet - Page 6

• Manufacturer Part Number: IXXK200N65B4
• Description: IGBT Transistors 650V/370A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXK200N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.4 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 370 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
130
110
200
180
160
140
120
100
90
70
50
30
10
80
60
40
20
0
25
1
Fig. 18. Inductive Turn-on Switching Times vs.
Fig. 20. Inductive Turn-on Switching Times vs.
T
V
t
r i
J
CE
= 150ºC, V
2
= 400V
50
3
I
C
I
GE
= 100A
C
t
d(on)
= 50A
= 15V
Junction Temperature
T
4
J
Gate Resistance
- Degrees Centigrade
- - - -
75
R
I
5
C
G
= 100A
- Ohms
I
6
C
t
R
V
r i
CE
100
G
= 50A
= 1
= 400V
Ω
7
, V
GE
= 15V
8
t
125
d(on)
- - - -
9
10
150
130
120
110
100
90
80
70
60
50
40
30
70
65
60
55
50
45
40
100
90
80
70
60
50
40
30
20
10
0
50
t
R
V
Fig. 19. Inductive Turn-on Switching Times vs.
r i
G
CE
55
= 1
= 400V
Ω
, V
60
GE
t
= 15V
d(on)
65
- - - -
Collector Current
70
I
C
75
- Amperes
80
IXXK200N65B4
IXXX200N65B4
85
T
J
90
= 25ºC
T
IXYS REF: IXX_200N65B4(F9)12-12-12
J
= 150ºC
95
100
64
62
60
58
56
54
52
50
48
46
44