IXXX160N65B4 Ixys, IXXX160N65B4 Datasheet - Page 3

• Manufacturer Part Number: IXXX160N65B4
• Description: IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXX160N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.54 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 310 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Package / Case: PLUS 247-3
• Continuous Collector Current Ic Max: 160 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

© 2012 IXYS CORPORATION, All Rights Reserved
320
280
240
200
160
120
320
280
240
200
160
120
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
80
40
80
40
0
0
0
7
0
0.5
8
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
1
9
Gate-to-Emitter Voltage
1
1.5
10
V
V
CE
V
CE
GE
- Volts
- Volts
V
11
1.5
GE
2
- Volts
V
GE
= 15V
= 15V
13V
12V
13V
12V
11V
2.5
I
12
C
= 320A
2
160A
80A
J
13
J
= 150ºC
3
= 25ºC
T
2.5
J
= 25ºC
3.5
14
10V
9V
8V
7V
11V
10V
9V
8V
7V
6V
15
4
3
350
300
250
200
150
100
200
180
160
140
120
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
80
60
40
20
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
V
GE
GE
1
-25
= 15V
= 15V
12V
11V
5
2
Fig. 4. Dependence of V
0
3
Fig. 6. Input Admittance
Junction Temperature
10V
9V
8V
7V
25
6
T
J
- Degrees Centigrade
4
V
CE
50
V
GE
- Volts
I
I
C
I
C
C
7
5
= 320A
- Volts
= 160A
= 80A
T
J
75
= - 40ºC
IXXK160N65B4
IXXX160N65B4
6
25ºC
CE(sat)
100
8
7
on
125
8
J
T
9
J
= 25ºC
= 150ºC
150
9
175
10
10