IXXX200N65B4 Ixys, IXXX200N65B4 Datasheet - Page 4

• Manufacturer Part Number: IXXX200N65B4
• Description: IGBT Transistors 650V/370A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXX200N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 370 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 1150 W
• Maximum Operating Temperature: + 175 C
• Package / Case: PLUS247-3
• Continuous Collector Current Ic Max: 200 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
0.001
1,000
0.01
160
140
120
100
0.1
100
0.3
0.00001
80
60
40
20
1
0
0
0
f
= 1 MHz
20
5
40
10
60
Fig. 7. Transconductance
0.0001
Fig. 9. Capacitance
15
80
I
C
V
CE
- Amperes
100
20
- Volts
120
25
C ies
C oes
C res
Fig. 11. Maximum Transient Thermal Impedance
Fig. 11. Maximum Transient Thermal Impedance
140
0.001
T
30
J
= - 40ºC
160
25ºC
150ºC
35
180
Pulse Width - Seconds
200
40
0.01
aaaa
450
400
350
300
250
200
150
100
16
14
12
10
50
0
8
6
4
2
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
50
CE
= 150ºC
= 1
= 200A
= 10mA
= 325V
Ω
Fig. 10. Reverse-Bias Safe Operating Area
200
100
0.1
150
300
Fig. 8. Gate Charge
200
Q
G
- NanoCoulombs
V
250
CE
400
- Volts
300
IXXK200N65B4
IXXX200N65B4
350
1
500
400
450
600
500
10
550
700