IXXK160N65C4 Ixys, IXXK160N65C4 Datasheet - Page 3

• Manufacturer Part Number: IXXK160N65C4
• Description: IGBT Transistors 650V/290A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXK160N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.7 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 290 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 160 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

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320
280
240
200
160
120
320
280
240
200
160
120
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
40
80
40
0
0
7
0
0
8
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
9
1
10
Gate-to-Emitter Voltage
1
1.5
11
V
CE
V
V
CE
GE
- Volts
- Volts
12
1.5
- Volts
2
V
V
GE
GE
I
= 15V
C
13
= 15V
= 320A
14V
13V
12V
2.5
160A
13V
12V
11V
80A
2
14
J
J
= 150ºC
3
= 25ºC
15
T
2.5
J
= 25ºC
3.5
16
8V
7V
10V
9V
11V
10V
8V
7V
9V
17
4
3
350
300
250
200
150
100
200
180
160
140
120
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
80
60
40
20
0
0
-50
0
4
V
GE
Fig. 2. Extended Output Characteristics @ T
V
= 15V
GE
12V
11V
-25
= 15V
2
5
0
Fig. 4. Dependence of V
Fig. 6. Input Admittance
Junction Temperature
25
4
6
T
J
10V
9V
8V
7V
- Degrees Centigrade
V
CE
50
V
GE
- Volts
I
C
6
7
- Volts
I
= 320A
C
75
= 160A
I
T
C
J
IXXK160N65C4
IXXX160N65C4
= 80A
= - 40ºC
25ºC
CE(sat)
100
8
8
on
125
J
10
9
T
= 25ºC
J
150
= 150ºC
175
10
12