IXXH60N65C4 Ixys, IXXH60N65C4 Datasheet - Page 3

• Manufacturer Part Number: IXXH60N65C4
• Description: IGBT Transistors 650V/118A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH60N65C4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.8 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 118 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

© 2012 IXYS CORPORATION, All Rights Reserved
120
100
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0
0
7
0.5
8
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
Fig. 5. Collector-to-Emitter Voltage vs.
1
9
1
1.5
Gate-to-Emitter Voltage
10
V
2
1.5
CE
V
V
CE
- Volts
GE
V
V
GE
- Volts
2.5
I
11
GE
- Volts
C
= 15V
30A
= 120A
= 15V
60A
14V
13V
14V
13V
12V
2
3
12
3.5
2.5
J
J
13
= 150ºC
= 25ºC
4
T
J
= 25ºC
3
14
4.5
11V
10V
9V
8V
7V
12V
11V
10V
7V
9V
8V
3.5
15
5
240
200
160
120
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
80
40
90
80
70
60
50
40
30
20
10
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
= 15V
5
5
Fig. 4. Dependence of V
0
6
Fig. 6. Input Admittance
Junction Temperature
10
25
T
J
- Degrees Centigrade
V
V
GE
CE
I
7
50
C
V
= 15V
GE
- Volts
= 120A
I
C
IXXH60N65C4
I
15
= 60A
- Volts
C
= 30A
75
8
14V
T
J
= - 40ºC
CE(sat)
100
13V
20
25ºC
9
12V
on
125
11V
J
25
T
J
= 25ºC
10
10V
= 150ºC
150
9V
8V
7V
175
30
11